School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China.
Nanoscale. 2019 Mar 14;11(11):4918-4924. doi: 10.1039/c8nr10222h.
High integration density, high responsivity, bandgap limitation breaking and multifunctional silicon photodetectors are the long term goals in the field of light detection. The photothermoelectric (PTE) effect discovered in silicon nanostructures utilizes the photon-induced temperature gradient to achieve electrical detection and provides a promising way towards meeting the above requirements. Here we report a plasmon modulated silicon nanostripe PTE detector with an open-circuit photovoltage responsivity of ∼82 mV μW-1. The gold subwavelength nanogratings provide enhanced optical absorption and polarization and wavelength sensitivity. An interesting reversed Seebeck coefficient of silicon caused by the Cr/Au contact was observed. This plasmon enhanced silicon PTE effect would pave the way for high integration, CMOS compatible photodetection and light harvesting devices.
高集成密度、高响应度、带隙限制突破和多功能硅光电探测器是光探测领域的长期目标。在硅纳米结构中发现的光热电（PTE）效应利用光子诱导的温度梯度实现电检测，为满足上述要求提供了一种很有前途的方法。在这里，我们报告了一种等离子体调制的硅纳米条 PTE 探测器，其开路光电压响应率约为 82 mV μW-1。金亚波长纳米光栅提供了增强的光吸收、偏振和波长灵敏度。观察到由于 Cr/Au 接触而引起的硅的有趣的反向塞贝克系数。这种等离子体增强的硅 PTE 效应将为高集成度、CMOS 兼容的光电探测和光收集器件铺平道路。
