Song Zehao, Sistani Masiar, Wind Lukas, Pohl Darius, Rellinghaus Bernd, Weber Walter M, Lugstein Alois
Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, A-1040 Vienna, Austria.
Dresden Center for Nanoanalysis, cfaed, Technische Universität Dresden, Helmholtzstraße 18, Dresden D-01069, Germany.
Nanotechnology. 2021 Oct 6;32(50). doi: 10.1088/1361-6528/ac2848.
To establish high-bandwidth chip-to-chip interconnects in optoelectronic integrated circuits, requires high-performance photon emitters and signal receiving components. Regarding the photodetector, fast device concepts like Schottky junction devices, large carrier mobility materials and shrinking the channel length will enable higher operation speed. However, integrating photodetectors in highly scaled ICs technologies is challenging due to the efficiency-speed trade-off. Here, we report a scalable and CMOS-compatible approach for an ultra-scaled germanium (Ge) based photodetector with tunable polarity. The photodetector is composed of a Ge Schottky barrier field effect transistor with monolithic aluminum (Al) source/drain contacts, offering plasmon assisted and polarization-resolved photodetection. The ultra-scaled Ge photodetector with a channel length of only 200 nm shows high responsivity of about = 424 A Wand a maximum polarization sensitivity ratio of TM/TE = 11.
要在光电集成电路中建立高带宽芯片间互连，需要高性能的光子发射器和信号接收组件。对于光电探测器，诸如肖特基结器件、大载流子迁移率材料以及缩短沟道长度等快速器件概念将实现更高的运行速度。然而，由于效率与速度的权衡，将光电探测器集成到高度缩放的集成电路技术中具有挑战性。在此，我们报告了一种用于具有可调极性的超缩放锗（Ge）基光电探测器的可扩展且与CMOS兼容的方法。该光电探测器由具有单片铝（Al）源极/漏极接触的锗肖特基势垒场效应晶体管组成，提供等离子体辅助和偏振分辨光检测。沟道长度仅为200 nm的超缩放锗光电探测器显示出约 = 424 A W的高响应度以及TM/TE = 11的最大偏振灵敏度比。
