ACS Appl Mater Interfaces. 2019 Mar 27;11(12):11812-11823. doi: 10.1021/acsami.9b01150. Epub 2019 Mar 14.
A relatively new class of two-dimensional (2D) materials called MXenes have garnered tremendous interest in the field of energy storage and conversion. Thus far nearly all MXenes reported experimentally have been described as metals, with a lone report of a mixed-metal carbide phase exhibiting semiconducting character. Here, we report the optical, electrocatalytic, and electrical properties of the 2D TiNT MXene (T = basal plane surface terminating groups) and show that this material exhbits both metallic and semiconducting behaviors. We provide complete structural characterization of exfoliated TiNT MXene and assign T = O and/or OH and find that this material is susceptible to surface oxidation. Optical experiments indicate that the exfoliated TiNT MXene forms a hybrid with a thin surface oxide layer resulting in visible light absorbtion at energies greater than ∼2.0 eV and an excitation wavelength-dependent defect-state emission over a broad range centered at ∼2.9 eV. As an electrocatalyst for the hydrogen evolution reaction, the exfoliated TiNT shows an overpotential of ∼300 mV at -10 mA cm and a Tafel slope of ∼190 mV dec. Finally, we observe semiconducting behavior at temperatures below ∼90 K from temperature-dependent transport measurements under 5 T magnetic field likely resulting from the thin oxide layer. These results unveil the intriguing optical, electrocatalytic, and electrical properties of this 2D TiNT MXene that expands the potential of these new 2D materials into electrocatalysis and (opto)electronic applications.
一种被称为 MXenes 的新型二维(2D)材料在能量存储和转换领域引起了极大的关注。到目前为止,几乎所有实验报道的 MXenes 都被描述为金属,仅有一份关于混合金属碳化物相表现出半导体性质的报告。在这里,我们报告了二维 TiNT MXene(T = 基面表面终止基团)的光学、电催化和电学性质,并表明该材料具有金属和半导体性质。我们提供了剥离 TiNT MXene 的完整结构表征,并确定了 T = O 和/或 OH,发现这种材料容易发生表面氧化。光学实验表明,剥离的 TiNT MXene 与薄的表面氧化层形成了一个杂化体,导致在大于约 2.0 eV 的能量下吸收可见光,并在约 2.9 eV 处的宽范围内产生依赖于激发波长的缺陷态发射。作为析氢反应的电催化剂,剥离的 TiNT 在-10 mA cm 时的过电位约为 300 mV,塔菲尔斜率约为 190 mV dec。最后,我们在 5 T 磁场下的温度依赖性输运测量中观察到低于约 90 K 的温度下的半导体行为,这可能是由于薄的氧化层造成的。这些结果揭示了这种二维 TiNT MXene 的令人着迷的光学、电催化和电学性质,将这些新型二维材料的潜力扩展到电催化和(光电)电子应用中。