Flexible Molybdenum Disulfide (MoS) Atomic Layers for Wearable Electronics and Optoelectronics.

Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS device structures. The photoluminescence (PL) of MoS atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS transistors. The review discusses the overall recent progress made in developing MoS based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.