Jang Jeongyun, Lee Yeon Jae, Roh Hayoung, Kim Sungho
Division of Electronic & Semiconductor Engineering, Ewha Womans University, Seoul, 03670, Republic of Korea.
Sci Rep. 2025 Jul 31;15(1):27901. doi: 10.1038/s41598-025-13658-0.
Accurate extraction of mobility parameters in two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is crucial for evaluating their performance and optimizing device design. Conventional mobility extraction methods such as the field-effect mobility approach suffer from inaccuracies owing to the influence of series resistance and noise amplification. In this paper, we present an advanced polynomial Y-function methodology for the precise mobility characterization of MoS FETs. This methodology enables a systematic discrimination among various scattering mechanisms while precisely extracting the threshold voltage. Through a comparative analysis of back-gate (BG) and top-gate (TG) MoS FET configurations, we demonstrated the superior accuracy and consistency of the proposed method compared with conventional approaches. The results revealed that the TG-FET exhibited stronger surface-roughness scattering owing to the intensified transverse electric field from the thinner dielectric layer, leading to pronounced mobility degradation. The polynomial Y-function method successfully isolates key degradation factors, thereby enabling a more comprehensive understanding of the carrier transport mechanisms in 2D FETs. These findings provide a robust framework for optimizing 2D material-based electronic devices, facilitating their integration into next-generation nanoelectronic applications.
在基于二维（2D）过渡金属二硫属化物（TMD）的场效应晶体管（FET）中准确提取迁移率参数对于评估其性能和优化器件设计至关重要。传统的迁移率提取方法，如场效应迁移率方法，由于串联电阻和噪声放大的影响而存在不准确的问题。在本文中，我们提出了一种先进的多项式Y函数方法，用于精确表征MoS FET的迁移率。这种方法能够在精确提取阈值电压的同时，对各种散射机制进行系统区分。通过对背栅（BG）和顶栅（TG）MoS FET配置的比较分析，我们证明了与传统方法相比，所提出的方法具有更高的准确性和一致性。结果表明，由于较薄介电层产生的横向电场增强，TG-FET表现出更强的表面粗糙度散射，导致迁移率明显下降。多项式Y函数方法成功地分离了关键的退化因素，从而能够更全面地理解二维FET中的载流子传输机制。这些发现为优化基于二维材料的电子器件提供了一个强大的框架，有助于将其集成到下一代纳米电子应用中。
