Chen Kuan-Yu, Yang Chih-Chiang, Su Yan-Kuin, Wang Zi-Hao, Yu Hsin-Chieh
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan.
Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University, Tainan 710, Taiwan.
Materials (Basel). 2019 Mar 4;12(5):737. doi: 10.3390/ma12050737.
In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In₂O₃ target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content. However, when the deposition power of the In₂O₃ target increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance, increased. The best performance was recorded at a threshold voltage of 1.1 V, on-off current ratio of 4.5 × 10⁶, and subthreshold swing of 3.82 V/dec in sample B. Meanwhile, the optical properties of sample B included a responsivity of 0.16 A/W and excellent ultraviolet-to-visible rejection ratio of 8 × 10⁴. IGO TFTs may act as photodetectors according to the results obtained for optical properties.
在本研究中，通过共溅射制备了非晶铟镓氧化物薄膜晶体管（IGO TFTs）。研究了三个具有不同In₂O₃靶材沉积功率的样品，即沉积功率为50 W的样品A、沉积功率为60 W的样品B和沉积功率为70 W的样品C。器件性能表明，氧空位强烈依赖于铟含量。然而，当In₂O₃靶材的沉积功率增加时，作为电荷载流子以改善器件性能的氧空位数量增加。样品B的阈值电压为1.1 V、开-关电流比为4.5×10⁶、亚阈值摆幅为3.82 V/dec时记录到最佳性能。同时，样品B的光学特性包括响应度为0.16 A/W以及出色的8×10⁴的紫外-可见抑制比。根据光学特性获得的结果，IGO TFTs可作为光电探测器。
