School of Science, Jilin Institute of Chemical Technology, Jilin 132022, China.
Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics and Electronic Sciences, Hubei University, Wuhan 430062, China.
Sensors (Basel). 2018 Jun 28;18(7):2072. doi: 10.3390/s18072072.
Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, junction type and junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.
紫外（UV）探测器在过去十年中引起了相当大的关注，因为它们在民用和军事领域有广泛的应用。基于宽带隙半导体的紫外探测器可以有效地探测紫外光，而纳米线结构可以通过许多量子效应极大地提高传感器的灵敏度。本综述总结了紫外探测器的分类和原理的最新进展，即光电导型、肖特基势垒型、金属-半导体-金属（MSM）型、结型和异质结型。还总结了过去五年中适用于制造用于紫外探测器的纳米线的宽带隙半导体材料的最新进展，即金属氧化物、III 族氮化物和 SiC。最后，介绍了新型紫外探测器，如混合纳米结构探测器、自供电探测器和柔性探测器。
