Hsu Ming-Hung, Chang Sheng-Po, Chang Shoou-Jinn, Li Chih-Wei, Li Jyun-Yi, Lin Chih-Chien
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
J Nanosci Nanotechnol. 2018 May 1;18(5):3518-3522. doi: 10.1166/jnn.2018.14665.
In this study, zinc indium tin oxide thin-film transistors (ZITO TFTs) were fabricated by the radio frequency (RF) sputtering deposition method. Adding indium cations to ZnO by co-sputtering allows the development of ZITO TFTs with improved performance. Material characterization revealed that ZITO TFTs have a threshold voltage of 0.9 V, a subthreshold swing of 0.294 V/decade, a field-effect mobility of 5.32 cm2/Vs, and an on-off ratio of 4.7 × 105. Furthermore, an investigation of the photosensitivity of the fabricated devices was conducted by an illumination test. The responsivity of ZITO TFTs was 26 mA/W, with 330-nm illumination and a gate bias of -1 V. The UV-to-visible rejection ratio for ZITO TFTs was 2706. ZITO TFTs were observed to have greater UV light sensitivity than that of ZnO TFTs. We believe that these results suggest a significant step toward achieving high photosensitivity. In addition, the ZITO semiconductor system could be a promising candidate for use in high performance transparent TFTs, as well as further sensing applications.
在本研究中，通过射频（RF）溅射沉积法制备了锌铟锡氧化物薄膜晶体管（ZITO TFTs）。通过共溅射向ZnO中添加铟阳离子可开发出性能得到改善的ZITO TFTs。材料表征表明，ZITO TFTs的阈值电压为0.9 V，亚阈值摆幅为0.294 V/十倍频程，场效应迁移率为5.32 cm2/Vs，开/关比为4.7×105。此外，通过光照测试对所制备器件的光敏性进行了研究。在330 nm光照和-1 V栅极偏压下，ZITO TFTs的响应度为26 mA/W。ZITO TFTs的紫外-可见抑制比为2706。观察到ZITO TFTs比ZnO TFTs具有更高的紫外光敏感性。我们认为，这些结果表明在实现高光敏性方面迈出了重要一步。此外，ZITO半导体系统有望用于高性能透明TFTs以及进一步的传感应用。
