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通过电沉积制备用于光电化学水分解的纳米多孔BiVO/TiO/Ti薄膜。

Preparation of nanoporous BiVO/TiO/Ti film through electrodeposition for photoelectrochemical water splitting.

作者信息

Hongxing Dong, Qiuping Liu, Yuehui He

机构信息

College of Electromechanical Engineering, Hangzhou Polytechnic, Hangzhou, Zhejiang, People's Republic of China.

College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang, People's Republic of China.

出版信息

R Soc Open Sci. 2018 Sep 19;5(9):180728. doi: 10.1098/rsos.180728. eCollection 2018 Sep.

Abstract

A nanoporous BiVO/TiO/Ti film was successfully fabricated by electrodepositing a nanoporous BiOI film on nanoporous TiO arrays followed by annealing at 450°C for 2 h. The electrodeposition of BiOI film was carried out at different times (10, 30, 100, 500 and 1000 s) in Bi(NO) and KI solution. The morphological, crystallographic and photoelectrochemical properties of the prepared BiVO/TiO/Ti heterojunction film were examined by using different characterization techniques. UV-vis spectrum absorption studies confirmed an increase in absorption intensities with increasing electrodeposition time, and the band gap of BiVO/TiO/Ti film is lower than that of TiO/Ti. The photocatalytic efficiency of BiVO/TiO/Ti heterojunction film was higher compared to that of the TiO/Ti film owing to the longer transient decay time for BiVO/TiO/Ti film (3.2 s) than that of TiO/Ti film (0.95 s) in our experiment. The BiVO/TiO/Ti heterojunction film prepared by electrodeposition for 1000 s followed by annealing showed a high photocurrent density of 0.3363 mA cm at 0.6 V versus saturated calomel electrode. Furthermore, the lowest charge transfer resistance from electrochemical impedance spectroscopy was recorded for the BiVO/TiO/Ti film (1000 s) under irradiation.

摘要

通过在纳米多孔TiO阵列上电沉积纳米多孔BiOI薄膜,然后在450°C退火2小时,成功制备了纳米多孔BiVO/TiO/Ti薄膜。BiOI薄膜的电沉积在Bi(NO)和KI溶液中于不同时间(10、30、100、500和1000秒)进行。使用不同的表征技术研究了制备的BiVO/TiO/Ti异质结薄膜的形态、晶体结构和光电化学性质。紫外可见光谱吸收研究证实,随着电沉积时间的增加,吸收强度增加,并且BiVO/TiO/Ti薄膜的带隙低于TiO/Ti薄膜。在我们的实验中,由于BiVO/TiO/Ti薄膜的瞬态衰减时间(3.2秒)比TiO/Ti薄膜的瞬态衰减时间(0.95秒)长,因此BiVO/TiO/Ti异质结薄膜的光催化效率高于TiO/Ti薄膜。通过电沉积1000秒然后退火制备的BiVO/TiO/Ti异质结薄膜在相对于饱和甘汞电极0.6 V时显示出0.3363 mA cm的高光电流密度。此外,在光照下,BiVO/TiO/Ti薄膜(1000秒)的电化学阻抗谱记录的电荷转移电阻最低。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9a39/6170590/ae8e44785275/rsos180728-g1.jpg

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