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用于光电化学水氧化的高效 BiVO4-TiO2 异质结光阳极的制备。

Fabrication of an Efficient BiVO4-TiO2 Heterojunction Photoanode for Photoelectrochemical Water Oxidation.

机构信息

Department of Chemical Engineering, National Cheng Kung University , Tainan 70101, Taiwan.

出版信息

ACS Appl Mater Interfaces. 2016 Aug 10;8(31):20032-9. doi: 10.1021/acsami.6b05489. Epub 2016 Aug 1.

DOI:10.1021/acsami.6b05489
PMID:27454929
Abstract

In this work, a simple planar BiVO4/TiO2 heterojunction photoanode was prepared on a fluorine-doped tin oxide (FTO) substrate for photoelectrochemical (PEC) water oxidation. The measurements of surface photovoltage, photocurrent transient behavior, and hole-scavenger-assisted PEC performance indicate that charge separation efficiency is improved compared to that of the BiVO4/FTO photoanode. This improvement is caused by the formation of the staggered BiVO4/TiO2 heterojunction. However, the photocurrent densities of the BiVO4/TiO2/FTO photoanode are higher than those of the BiVO4/FTO one only at potentials >1.2 V vs reversible hydrogen electrode, although the two BiVO4 layers with comparable light harvesting efficiencies were prepared by the same method. The hole-scavenger-assisted PEC measurements reveal that the hole injection efficiency of the BiVO4/TiO2/FTO photoanode is inferior to that of the bare BiVO4/FTO anode for oxygen evolution. It shows that the surface property of the BiVO4 layers is altered as they are deposited on different substrates. On the basis of these characterizations, the cocatalyst cobalt phosphate (Co-Pi) was further deposited on the surface of BiVO4/TiO2/FTO photoanode to improve the hole injection efficiency. Subsequently, the photocurrent density and stability of the Co-Pi/BiVO4/TiO2/FTO photoanode were significantly improved compared to those of the bare BiVO4/FTO photoanode.

摘要

在这项工作中,我们在掺氟氧化锡(FTO)基底上制备了简单的平面 BiVO4/TiO2 异质结光阳极,用于光电化学(PEC)水氧化。表面光电压、光电流瞬态行为和空穴捕获剂辅助 PEC 性能的测量表明,与 BiVO4/FTO 光阳极相比,电荷分离效率得到了提高。这种改善是由于形成了交错的 BiVO4/TiO2 异质结。然而,尽管用相同的方法制备了具有可比的光捕获效率的两个 BiVO4 层,但 BiVO4/TiO2/FTO 光阳极的光电流密度仅在 >1.2 V 相对于可逆氢电极的电势下才高于 BiVO4/FTO 光阳极的光电流密度。空穴捕获剂辅助 PEC 测量表明,对于氧的析出,BiVO4/TiO2/FTO 光阳极的空穴注入效率不如裸 BiVO4/FTO 阳极。这表明 BiVO4 层的表面性质在沉积在不同基底上时发生了改变。基于这些特性,进一步在 BiVO4/TiO2/FTO 光阳极的表面沉积了磷酸钴(Co-Pi)作为助催化剂,以提高空穴注入效率。随后,与裸 BiVO4/FTO 光阳极相比,Co-Pi/BiVO4/TiO2/FTO 光阳极的光电流密度和稳定性得到了显著提高。

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