Fabrication of a cost effective and broadband self-powered photodetector based on SbTe and silicon.

The excellent conductive surface electronic states of topological insulators make them suitable candidates for the next generation optoelectronic devices. Moreover, their unique semiconducting properties are favorable for building heterojunctions with other semiconductors. Here, we fabricated a low cost and broadband self-powered photodetector based on SbTe and Si. The photolithography and thermal evaporation technique were combined to fabricate a series of asymmetric planar SbTe electrodes on the surface of an n-type silicon substrate. An obvious asymmetrical current voltage curve occurred under dark conditions, which is ascribed to the asymmetry of each electrode. During the photodetection test, self-powered photodetection was obtained upon 940 nm light irradiation. Moreover, the photodetector exhibited fast and broadband photodetection from 365 nm to 940 nm with a response time less than 40 ms.