Yu Xiang-Xiang, Wang Yu-Hua, Zhang Hua-Feng, Zhu De-Sheng, Xiong Yan, Zhang Wei-Bin
School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China.
Nanotechnology. 2019 Aug 23;30(34):345202. doi: 10.1088/1361-6528/ab0d5c. Epub 2019 Mar 6.
The excellent conductive surface electronic states of topological insulators make them suitable candidates for the next generation optoelectronic devices. Moreover, their unique semiconducting properties are favorable for building heterojunctions with other semiconductors. Here, we fabricated a low cost and broadband self-powered photodetector based on SbTe and Si. The photolithography and thermal evaporation technique were combined to fabricate a series of asymmetric planar SbTe electrodes on the surface of an n-type silicon substrate. An obvious asymmetrical current voltage curve occurred under dark conditions, which is ascribed to the asymmetry of each electrode. During the photodetection test, self-powered photodetection was obtained upon 940 nm light irradiation. Moreover, the photodetector exhibited fast and broadband photodetection from 365 nm to 940 nm with a response time less than 40 ms.
拓扑绝缘体优异的导电表面电子态使其成为下一代光电器件的合适候选材料。此外，它们独特的半导体特性有利于与其他半导体构建异质结。在此，我们基于SbTe和Si制备了一种低成本、宽带自供电光电探测器。结合光刻和热蒸发技术，在n型硅衬底表面制备了一系列不对称平面SbTe电极。在黑暗条件下出现了明显的不对称电流-电压曲线，这归因于每个电极的不对称性。在光电探测测试中，在940 nm光照射下实现了自供电光电探测。此外，该光电探测器在365 nm至940 nm范围内表现出快速且宽带的光电探测，响应时间小于40 ms。
