University of Science and Technology Beijing , Beijing 100083 , People's Republic of China.
Langmuir. 2018 Nov 27;34(47):14151-14157. doi: 10.1021/acs.langmuir.8b02171. Epub 2018 Nov 12.
Here, a self-powered photodetector based on the monolayer MoS/P-Si heterojunction with asymmetric electrodes was fabricated. The MoS/p-Si heterojunction photodetector with asymmetric electrodes offers the advantages over the conventional heterojunction photodetector on optoelectronic applications in terms of strong built-in electric field and fast photogenerated carrier separation and transport. Significantly, the MoS/P-Si heterojunction exhibited an obvious photovoltaic effect, which can be used as the self-powered photodetector operating without any bias voltage. At a voltage bias of 0 V, the photocurrent of the detector is 23 nA, and its photoresponse/recovery time is 84 ms/136 ms. When at bias, the detector shows a ratio of photocurrent to dark current up to 3120, high responsivity of 117 A W, and fast photoresponse/recovery time of 74 ms/115 ms. Our work illustrates the great potential of the MoS/P-Si heterojunction device with asymmetric electrodes on photovoltaic applications.
在这里，我们制备了一种基于具有不对称电极的单层 MoS/P-Si 异质结的自供电光电探测器。与传统的异质结光电探测器相比，具有不对称电极的 MoS/p-Si 异质结光电探测器在光电应用方面具有更强的内置电场和更快的光生载流子分离和输运的优势。值得注意的是，MoS/P-Si 异质结表现出明显的光伏效应，可作为无需外加偏压即可工作的自供电光电探测器。在 0 V 的电压偏置下，探测器的光电流为 23 nA，其光电响应/恢复时间分别为 84 ms 和 136 ms。在偏置时，探测器的光电流与暗电流的比值高达 3120，响应率高达 117 A W，光电响应/恢复时间分别为 74 ms 和 115 ms。我们的工作说明了具有不对称电极的 MoS/P-Si 异质结器件在光伏应用方面具有巨大的潜力。
