• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

嵌入原子对石墨烯纳米带/六方氮化硼堆叠层电子结构的影响。

Effects of intercalated atoms on electronic structure of graphene nanoribbon/hexagonal boron nitride stacked layer.

作者信息

Sung Dongchul, Kim Gunn, Hong Suklyun

机构信息

Department of Physics & Astronomy and Graphene Research Institute, Sejong University, Seoul, 05006, Republic of Korea.

出版信息

Sci Rep. 2019 Mar 6;9(1):3623. doi: 10.1038/s41598-019-39719-9.

DOI:10.1038/s41598-019-39719-9
PMID:30842541
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6403252/
Abstract

Using first-principles calculations, we investigate an atomic impurity at the interface of a van der Waals heterostructure (vdW heterostructure) consisting of a zigzag graphene nanoribbon (ZGNR) and a hexagonal boron nitride (h-BN) sheet. To find effects of atomic intercalation on geometrical and electronic properties of the ZGNR on the h-BN sheet, various types of impurity atoms are considered. The embedded atoms are initially placed at the edge or the middle of the ZGNR located on the h-BN sheet. Our results demonstrate that most of the impurity atoms are more stable at the edge than at the middle in all cases we consider. Especially, a nickel atom has the smallest energy difference (~0.15 eV) between the two embedding positions, which means that the Ni atom is relatively easy to intercalate in the structure. Finally, we discuss magnetic properties for the vdW heterostructure with an intercalated atom.

摘要

利用第一性原理计算,我们研究了由锯齿形石墨烯纳米带(ZGNR)和六方氮化硼(h-BN)片组成的范德华异质结构(vdW异质结构)界面处的原子杂质。为了研究原子插层对h-BN片上ZGNR的几何和电子性质的影响,我们考虑了各种类型的杂质原子。嵌入的原子最初放置在位于h-BN片上的ZGNR的边缘或中间。我们的结果表明,在我们考虑的所有情况下,大多数杂质原子在边缘比在中间更稳定。特别是,镍原子在两个嵌入位置之间的能量差最小(约0.15 eV),这意味着镍原子相对容易插入该结构中。最后,我们讨论了具有插层原子的vdW异质结构的磁性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/33622fd8f9ea/41598_2019_39719_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/14e591064cf0/41598_2019_39719_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/b4119ecbfb37/41598_2019_39719_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/16c2c6e0f3dd/41598_2019_39719_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/33622fd8f9ea/41598_2019_39719_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/14e591064cf0/41598_2019_39719_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/b4119ecbfb37/41598_2019_39719_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/16c2c6e0f3dd/41598_2019_39719_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6092/6403252/33622fd8f9ea/41598_2019_39719_Fig4_HTML.jpg

相似文献

1
Effects of intercalated atoms on electronic structure of graphene nanoribbon/hexagonal boron nitride stacked layer.嵌入原子对石墨烯纳米带/六方氮化硼堆叠层电子结构的影响。
Sci Rep. 2019 Mar 6;9(1):3623. doi: 10.1038/s41598-019-39719-9.
2
Tuning the band structure, magnetic and transport properties of the zigzag graphene nanoribbons/hexagonal boron nitride heterostructures by transverse electric field.通过横向电场调控锯齿形石墨烯纳米带/六方氮化硼异质结构的能带结构、磁性和输运性质。
J Chem Phys. 2014 Jul 7;141(1):014708. doi: 10.1063/1.4885857.
3
Molecular Dynamics Simulation on In-Plane Thermal Conductivity of Graphene/Hexagonal Boron Nitride van der Waals Heterostructures.石墨烯/六方氮化硼范德华异质结构面内热导率的分子动力学模拟
ACS Appl Mater Interfaces. 2022 Oct 12;14(40):45742-45751. doi: 10.1021/acsami.2c14871. Epub 2022 Sep 29.
4
Structural evolution of in-plane hybrid graphene/hexagonal boron nitride heterostructure upon heating.面内杂化石墨烯/六方氮化硼异质结构在加热过程中的结构演变。
J Mol Graph Model. 2023 Dec;125:108579. doi: 10.1016/j.jmgm.2023.108579. Epub 2023 Jul 28.
5
h-BN/graphene van der Waals vertical heterostructure: a fully spin-polarized photocurrent generator.h-BN/石墨烯范德华垂直异质结:全自旋极化光电流发生器。
Nanoscale. 2017 Dec 21;10(1):174-183. doi: 10.1039/c7nr06159e.
6
Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies.通过插入缺陷或空位增强石墨烯/六方氮化硼异质结构中的层间耦合
J Chem Phys. 2014 Apr 7;140(13):134706. doi: 10.1063/1.4870097.
7
Determination of optimum optoelectronic properties in vertically stacked MoS/h-BN/WSe van der Waals heterostructures.确定垂直堆叠 MoS/h-BN/WSe 范德华异质结构中的最佳光电性能。
Phys Chem Chem Phys. 2019 Oct 24;21(41):23179-23186. doi: 10.1039/c9cp04700j.
8
The Impact of Interlayer Rotation on Thermal Transport Across Graphene/Hexagonal Boron Nitride van der Waals Heterostructure.层间旋转对石墨烯/六方氮化硼范德华异质结构热输运的影响
Nano Lett. 2021 Mar 24;21(6):2634-2641. doi: 10.1021/acs.nanolett.1c00294. Epub 2021 Mar 3.
9
Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures.氟化石墨烯和六方氮化硼作为基于石墨烯的范德华异质结构的原子层沉积(ALD)种子层。
Nanotechnology. 2014 Sep 5;25(35):355202. doi: 10.1088/0957-4484/25/35/355202. Epub 2014 Aug 12.
10
Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures.控制电化学插层石墨烯/六方氮化硼范德华异质结构。
Nano Lett. 2018 Jan 10;18(1):460-466. doi: 10.1021/acs.nanolett.7b04396. Epub 2017 Dec 27.

本文引用的文献

1
Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure.外延生长的石墨烯/h-BN异质结构中的能带隙和边缘态
Sci Rep. 2016 Aug 9;6:31160. doi: 10.1038/srep31160.
2
Residual metallic contamination of transferred chemical vapor deposited graphene.转移化学气相沉积石墨烯的残余金属杂质。
ACS Nano. 2015 May 26;9(5):4776-85. doi: 10.1021/acsnano.5b01261. Epub 2015 Apr 28.
3
Is hexagonal boron nitride always good as a substrate for carbon nanotube-based devices?六方氮化硼作为基于碳纳米管的器件的衬底总是好的吗?
Phys Chem Chem Phys. 2015 Feb 21;17(7):5072-7. doi: 10.1039/c4cp05478d.
4
Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies.通过插入缺陷或空位增强石墨烯/六方氮化硼异质结构中的层间耦合
J Chem Phys. 2014 Apr 7;140(13):134706. doi: 10.1063/1.4870097.
5
Enhanced binding strength between metal nanoclusters and carbon nanotubes with an atomic nickel defect.具有原子镍缺陷的金属纳米团簇与碳纳米管之间增强的结合强度。
Nanotechnology. 2012 May 25;23(20):205204. doi: 10.1088/0957-4484/23/20/205204. Epub 2012 Apr 30.
6
Ultraflat graphene.超扁平石墨烯。
Nature. 2009 Nov 19;462(7271):339-41. doi: 10.1038/nature08569.
7
Self-assembled metal atom chains on graphene nanoribbons.石墨烯纳米带上的自组装金属原子链。
Phys Rev Lett. 2008 Dec 31;101(26):266105. doi: 10.1103/PhysRevLett.101.266105.
8
Giant intrinsic carrier mobilities in graphene and its bilayer.石墨烯及其双层结构中的巨大本征载流子迁移率。
Phys Rev Lett. 2008 Jan 11;100(1):016602. doi: 10.1103/PhysRevLett.100.016602. Epub 2008 Jan 7.
9
Electron scattering on microscopic corrugations in graphene.石墨烯中微观波纹上的电子散射。
Philos Trans A Math Phys Eng Sci. 2008 Jan 28;366(1863):195-204. doi: 10.1098/rsta.2007.2157.
10
Carrier transport in two-dimensional graphene layers.二维石墨烯层中的载流子输运。
Phys Rev Lett. 2007 May 4;98(18):186806. doi: 10.1103/PhysRevLett.98.186806. Epub 2007 May 3.