Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Center for Micro-Nanotechnology, School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China.
Nanoscale. 2019 Mar 21;11(12):5188-5196. doi: 10.1039/c9nr00452a.
Organic-inorganic hybrid perovskite materials with exotic semiconducting properties have become inevitable candidates for next-generation electronic devices. Very recently, a low dimensional nanostructure of the perovskite materials has attracted the scientific community due to its enhanced performance in optoelectronics as compared to its bulk counterparts. Herein, a facile method was developed for the scalable, room-temperature synthesis of CH3NH3PbI3 (MAPbI3) nano/microtubes by direct conversion of lead iodide (PbI2) microtubes through a solution-phase method. At first, the PbI2 microtubes were synthesized by the anti-solvent crystallization process and subsequently converted to CH3NH3PbI3 nano/microtubes by the addition of CH3NH3I (MAI) precursor directly in the solution phase. The corresponding photodetectors (PDs) in the lateral metal-semiconductor-metal (MSM) configuration of the PbI2 microtubes and MAPbI3 nano/microtubes on glass substrates were investigated systematically. Compared to the PbI2 based PDs (557 mA W-1, 3.65 × 1012 Jones, 0.251 s/0.252 s), the MAPbI3 based PDs exhibit higher photoresponsivity, specific detectivity, and faster response time (25 A W-1, 9.9 × 1013 Jones, 49 ms/20 ms) under irradiation with 4.6 μW cm-2 intensity light of the 532 nm laser at a bias of 5 V. The proposed method is a low-temperature process, easy to apply in large scale synthesis, and finds potential applications in optoelectronic devices.
具有奇特半导体性质的有机-无机杂化钙钛矿材料已成为下一代电子器件的必然候选材料。最近，由于其在光电方面的性能优于其体相对应物，钙钛矿材料的低维纳米结构引起了科学界的关注。在此，通过溶液法，我们开发了一种简便的方法，可在室温下大规模合成 CH3NH3PbI3（MAPbI3）纳米/微管，该方法通过直接将碘化铅（PbI2）微管转化为钙钛矿前驱体 CH3NH3I（MAI）。首先，通过反溶剂结晶过程合成 PbI2 微管，然后通过直接在溶液相中添加 CH3NH3I（MAI）前体制备 CH3NH3PbI3 纳米/微管。系统地研究了玻璃衬底上 PbI2 微管和 MAPbI3 纳米/微管的横向金属-半导体-金属（MSM）结构的光电探测器（PD）。与基于 PbI2 的 PD（557 mA W-1，3.65×1012 琼斯，0.251 s/0.252 s）相比，基于 MAPbI3 的 PD 在 5 V 偏压下，在 4.6 μW cm-2 强度的 532 nm 激光照射下，具有更高的光响应率、更高的比探测率和更快的响应时间（25 A W-1，9.9×1013 琼斯，49 ms/20 ms）。该方法是一种低温工艺，易于大规模合成，在光电器件中有潜在的应用。
