原子层沉积制备的钌基阻变随机存取存储器器件中的负微分电阻效应

Feng Yulin, Huang Peng, Zhou Zheng, Ding Xiangxiang, Liu Lifeng, Liu Xiaoyan, Kang Jinfeng

Institute of Microelectronics, Peking University, Beijing, 100871, China.

Nanoscale Res Lett. 2019 Mar 11;14(1):86. doi: 10.1186/s11671-019-2885-2.

In this work, Ru-based RRAM devices with atomic layer deposited AlO/HfO functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation.

在这项工作中，制备并研究了具有原子层沉积AlO/HfO功能层的钌基阻变随机存取存储器（RRAM）器件。在电压设置过程中观察到负微分电阻（NDR）行为，并对其物理起源进行了探索。基于对电阻开关的物理理解，认为所测量的NDR行为与部分单极复位效应有关，这是由于氧空位与从RuO界面层热释放的氧离子之间的复合所致。所测量的电学特性和X射线光电子能谱（XPS）结果验证了这种物理解释。