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通过旋涂具有结晶辅助层的高性能三异丙基硅基乙炔基并五苯晶体管。

High-performance triisopropylsilylethynyl pentacene transistors via spin coating with a crystallization-assisting layer.

机构信息

Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea.

出版信息

ACS Appl Mater Interfaces. 2012 Jan;4(1):117-22. doi: 10.1021/am201074n. Epub 2011 Oct 28.

Abstract

The effects of spin speed and an amorphous fluoropolymer (CYTOP)-patterned substrate on the crystalline structures and device performance of triisopropylsilylethynyl pentacene (TIPS-PEN) organic field-effect transistors (OFETs) were investigated. The crystallinity of the TIPS-PEN film was enhanced by decreasing the spin speed, because slow evaporation of the solvent provided a sufficient time for the formation of thermodynamically stable crystalline structures. In addition, the adoption of a CYTOP-patterned substrate induced the three-dimensional (3D) growth of the TIPS-PEN crystals, because the patterned substrate confined the TIPS-PEN molecules and allowed sufficient time for the self-organization of TIPS-PEN. TIPS-PEN OFETs fabricated at a spin speed of 300 rpm with a CYTOP-patterned substrate showed a field-effect mobility of 0.131 cm(2) V(-1) s(-1), which is a remarkable improvement over previous spin-coated TIPS-PEN OFETs.

摘要

研究了旋转速度和无定形氟聚合物(CYTOP)图案基底对三异丙基硅乙炔基戊二烯(TIPS-PEN)有机场效应晶体管(OFET)的晶体结构和器件性能的影响。通过降低旋转速度,可以增强 TIPS-PEN 薄膜的结晶度,因为溶剂的缓慢蒸发为形成热力学稳定的晶体结构提供了足够的时间。此外,采用 CYTOP 图案化基底诱导了 TIPS-PEN 晶体的三维(3D)生长,因为图案化基底限制了 TIPS-PEN 分子并为 TIPS-PEN 的自组织提供了足够的时间。在旋转速度为 300 rpm 的情况下,使用 CYTOP 图案化基底制造的 TIPS-PEN OFET 的场效应迁移率为 0.131 cm(2) V(-1) s(-1),这比以前旋涂的 TIPS-PEN OFET 有了显著的提高。

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