Department of Chemical & Biological Engineering, Hanbat National University , Daejeon 305-719, Republic of Korea.
Department of Nano, Medical and Polymer Materials, Yeungnam University , Gyeongsan 712-749, Republic of Korea.
ACS Appl Mater Interfaces. 2016 Sep 21;8(37):24753-60. doi: 10.1021/acsami.6b07229. Epub 2016 Sep 7.
The preparation of uniform large-area highly crystalline organic semiconductor single crystals remains a challenge in the field of organic field-effect transistors (OFETs). Crystal densities in the channel regions of OFETs have not yet reached sufficiently high values to provide efficient charge transport, and improving channel crystal densities remains an important research area. Herein we fabricated densely well-aligned single crystal arrays of the 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS_PEN) semiconductor using a straightforward scooping-up (SU) methodology to quickly produce a large-area self-assembled semiconductor crystal layer. The resulting crystalline TIPS_PEN strip arrays obtained using the SU method revealed a packing density that was 2.76 times the value obtained from the dip-coated channel, and the mean interspatial distance between the crystal strips decreased from 21.5 to 7.8 μm. The higher crystal packing density provided efficient charge transport in the FET devices and directly yielded field-effect mobilities as high as 2.16 cm(2)/(V s). These field-effect mobilities were more than three times the values obtained from the OFETs prepared using dip-coated channels. Furthermore, the contact resistance between the source/drain electrodes and the TIPS_PEN crystals decreased by a factor of 2. These contributions represent a significant step forward in improving semiconductor crystal alignment for the fabrication of large-area high-performance organic electronics.
制备均匀大面积高结晶性有机半导体单晶仍然是有机场效应晶体管 (OFET) 领域的一个挑战。OFET 沟道区域中的晶体密度尚未达到足够高的水平,无法提供有效的电荷输运,因此提高沟道晶体密度仍然是一个重要的研究领域。在此,我们使用简单的勺取 (SU) 方法制备了密集排列的高质量六,十三-双(三异丙基硅基乙炔基)并五苯 (TIPS_PEN) 半导体单晶阵列,以快速生产大面积自组装半导体晶体层。使用 SU 方法获得的结晶 TIPS_PEN 条阵列的堆积密度是浸涂沟道获得的堆积密度的 2.76 倍,晶体条之间的平均间隔距离从 21.5 μm 减小到 7.8 μm。更高的晶体堆积密度为 FET 器件提供了高效的电荷输运,并直接产生了高达 2.16 cm²/(V s)的场效应迁移率。这些场效应迁移率比使用浸涂沟道制备的 OFET 获得的值高 3 倍以上。此外,源/漏电极与 TIPS_PEN 晶体之间的接触电阻降低了 2 倍。这些贡献代表了在改善大面积高性能有机电子器件的半导体晶体排列方面向前迈出的重要一步。