Ma Pijie, Liu Anjin, Dong Fengxin, Wang Mingjin, Zheng Wanhua
Opt Express. 2019 Feb 18;27(4):5502-5511. doi: 10.1364/OE.27.005502.
The output characteristics, modal properties, far-field profiles, and dynamic modulation responses of semiconductor lasers with surface higher-order gratings fabricated by the standard photolithography are presented. Single-mode semiconductor lasers with 20- and 37-order gratings for the 1.55 µm wavelength range are realized. The single-mode semiconductor lasers with 20-order gratings have lower threshold currents and higher slope efficiencies than those with 37-order gratings. The surface higher-order grating placed closed to the output facet can deteriorate the vertical far-field profile of the semiconductor laser. However, the properties of the semiconductor laser's single-mode operation are not affected by the surface higher-order grating's position in the ridge waveguide. The -3 dB bandwidth of these single-mode semiconductor lasers can achieve 9 GHz at 100 mA, which is the highest, to the best of our knowledge, for such a kind of single-mode semiconductor laser with a surface higher-order grating.
介绍了采用标准光刻技术制备的具有表面高阶光栅的半导体激光器的输出特性、模态特性、远场分布和动态调制响应。实现了适用于1.55μm波长范围的具有20阶和37阶光栅的单模半导体激光器。具有20阶光栅的单模半导体激光器比具有37阶光栅的单模半导体激光器具有更低的阈值电流和更高的斜率效率。靠近输出面放置的表面高阶光栅会使半导体激光器的垂直远场分布变差。然而，半导体激光器单模工作的特性不受表面高阶光栅在脊形波导中位置的影响。据我们所知，这些单模半导体激光器在100 mA时的-3 dB带宽可达9 GHz，这是此类具有表面高阶光栅的单模半导体激光器中最高的。
