Ding Yun-Yun, Lv Zun-Ren, Zhang Zhong-Kai, Yuan Hui-Hong, Yang Tao
Appl Opt. 2020 Feb 20;59(6):1648-1653. doi: 10.1364/AO.383089.
We report on the design, fabrication, and characterization of single longitudinal mode InAs/GaAs quantum dot lasers emitting at the 1.3 µm communication band. The influence of simply etched surface high-order gratings in the ridge of the Fabry-Perot lasers has been studied. A 35th-order surface grating is fabricated by standard photolithography to introduce the refractive index perturbation, which leads to the reduced mirror loss at the desired wavelength and thus realizing single longitudinal mode lasing. Stable single-mode operations are maintained at the injection current range of 45-100 mA with a side-mode suppression ratio up to 33 dB.
我们报道了在1.3 µm通信波段发射的单纵模InAs/GaAs量子点激光器的设计、制造和特性。研究了法布里-珀罗激光器脊形结构中简单蚀刻的表面高阶光栅的影响。通过标准光刻制造了一个35阶表面光栅，以引入折射率微扰，这导致在所需波长处的镜面损耗降低，从而实现单纵模激射。在45 - 100 mA的注入电流范围内保持稳定的单模工作，边模抑制比高达33 dB。
