Xu Shengqiang, Wang Wei, Huang Yi-Chiau, Dong Yuan, Masudy-Panah Saeid, Wang Hong, Gong Xiao, Yeo Yee-Chia
Opt Express. 2019 Feb 18;27(4):5798-5813. doi: 10.1364/OE.27.005798.
We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode, exhibiting a 3-dB bandwidth (f3-dB) above 10 GHz for the first time. The epitaxy of device layer stacks was performed on a standard (001)-oriented 300 mm Si substrate by using reduced pressure chemical vapor deposition (RPCVD). The results showed promise for large-scale manufacturing. To our knowledge, this is also the first photodiodes-on-Si with direct radio-frequency (RF) measurement to quantitatively confirm high-speed functionality with tens of GHz f3-dB at 2 µm, which is considered as a promising candidate for the next data communication window. This work illustrates the potential for using GeSn to extend the utility of Si photonics in 2 µm band integrated optical transceivers for communication applications.
我们报道了一种由GeSn/Ge多量子阱（MQW）p-i-n光电二极管实现的两微米波长高速光电探测，首次展示了超过10 GHz的3 dB带宽（f3-dB）。器件层堆栈的外延是通过使用减压化学气相沉积（RPCVD）在标准（001）取向的300 mm硅衬底上进行的。结果显示了大规模制造的前景。据我们所知，这也是首个通过直接射频（RF）测量来定量确认在2 µm波长下具有数十GHz f3-dB高速功能的硅基光电二极管，它被认为是下一代数据通信窗口的一个有前途的候选者。这项工作说明了利用GeSn扩展硅光子学在用于通信应用的2 µm波段集成光收发器中的效用的潜力。
