基于GeSn的p-i-n光电探测器在高功率密度下工作时光响应的功率依赖性研究。

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density.

作者信息

Chang Chiao, Cheng Hung-Hsiang, Sevison Gary A, Hendrickson Joshua R, Li Zairui, Agha Imad, Mathews Jay, Soref Richard A, Sun Greg

机构信息

Center for Condense Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan.

Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, USA.

出版信息

Materials (Basel). 2022 Jan 27;15(3):989. doi: 10.3390/ma15030989.

DOI:10.3390/ma15030989

PMID:35160939

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8838467/

Abstract

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

摘要

我们报告了一项使用可调谐激光器在一系列入射光功率下对基于GeSn的光电探测器的光响应进行的研究。在较高光功率范围内，观察到光电流呈指数增加，响应度随入射光功率强度增加呈指数衰减。时间分辨测量提供的证据表明，对于不同的入射光功率强度，光生载流子存在单分子和双分子复合机制。这项研究确定了基于GeSn的光电探测器工作的合适光功率强度范围。