发射波长为3微米的基于锑化镓的垂直腔面发射激光器。

GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm.

作者信息

Andrejew Alexander, Sprengel Stephan, Amann Markus-Christian

出版信息

Opt Lett. 2016 Jun 15;41(12):2799-802. doi: 10.1364/OL.41.002799.

DOI:10.1364/OL.41.002799

Abstract

GaSb-based electrically pumped vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss VCSEL concept with an undoped epitaxial distributed Bragg reflector and intracavity contact is presented. The devices operate up to 5°C continuous wave and up to 50°C in pulsed mode. Single-mode operation with a side-mode suppression ratio of 30 dB and electro-thermal tuning range of 19.7 nm is achieved.

摘要

展示了基于锑化镓的电泵浦垂直腔面发射激光器（VCSEL），其掩埋隧道结发射波长为3μm。为此，提出了一种具有未掺杂外延分布布拉格反射器和腔内接触的低光损耗VCSEL概念。这些器件在连续波模式下可在5°C下工作，在脉冲模式下可在50°C下工作。实现了边模抑制比为30 dB且电热调谐范围为19.7 nm的单模工作。