Gong Bo, Li Yu, Liu Fusheng, Zhu Jiaxu, Wang Xiao, Ao Weiqin, Zhang Chaohua, Li Junqin, Xie Heping, Zhu Tiejun
College of Materials Science and Engineering, Institute of Deep Underground Sciences and Green Energy, and Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , P. R. China.
State Key Laboratory of Silicon Materials and School of Materials Science and Engineering , Zhejiang University , Hangzhou 310027 , P. R. China.
ACS Appl Mater Interfaces. 2019 Apr 10;11(14):13397-13404. doi: 10.1021/acsami.9b00648. Epub 2019 Mar 26.
ZrNiSn-based half-Heusler (HH) alloys are considered very promising thermoelectric (TE) materials at intermediate and high temperatures due to their favorable intrinsic electrical properties, but they are also limited by their inherent high thermal conductivities. Numerous works have focused on reducing their thermal conductivities, especially their lattice thermal conductivities. A multielement (Ti, Hf, Nb, V, and Sb) and multisite alloying strategy for simultaneously improving the electrical properties and greatly reducing the lattice thermal conductivity of ZrNiSn-based HH TE materials is reported in this work. The continuous enhancement in structural disorder is the main factor in dramatically suppressing the lattice thermal conductivity of the materials. The use of suitable dopants also optimizes the electrical properties of the material, which is also an indispensable aspect in achieving high ZT values. As a consequence, a lowest lattice thermal conductivity κ = 0.99 W/(m K) and a highest ZT ∼ 1.2 were obtained for ZrMNiSnSb (M = TiHfVNb) refined by a ball-milling process. The calculated conversion efficiency (η) of the same sample from room temperature to 873 K was close to 12%. In addition, compared with that used in other studies, the amount of Hf used in this study was greatly reduced, which means a reduction in cost. All of the findings in this study make the commercialization of ZrNiSn-based TE materials more competitive.
基于ZrNiSn的半赫斯勒(HH)合金因其良好的本征电学性能,被认为是中高温下非常有前景的热电(TE)材料,但它们也受到固有高导热率的限制。许多工作都集中在降低它们的导热率,尤其是晶格热导率。本文报道了一种多元素(Ti、Hf、Nb、V和Sb)和多位点合金化策略,用于同时改善基于ZrNiSn的HH TE材料的电学性能并大幅降低其晶格热导率。结构无序的持续增强是显著抑制材料晶格热导率的主要因素。使用合适的掺杂剂还优化了材料的电学性能,这也是实现高ZT值不可或缺的一个方面。因此,通过球磨工艺细化的ZrMNiSnSb(M = TiHfVNb)获得了最低晶格热导率κ = 0.99 W/(m·K)和最高ZT ∼ 1.2。同一样品从室温到873 K的计算转换效率(η)接近12%。此外,与其他研究中使用的量相比,本研究中使用的Hf量大幅减少,这意味着成本降低。本研究的所有发现使基于ZrNiSn的TE材料商业化更具竞争力。