Dong Yulian, Xu Yang, Li Wei, Fu Qun, Wu Minghong, Manske Eberhard, Kröger Jörg, Lei Yong
Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai, 200444, China.
Institut für Physik, Technische Universität Ilmenau, Ilmenau, 98693, Germany.
Small. 2019 Apr;15(15):e1900497. doi: 10.1002/smll.201900497. Epub 2019 Mar 18.
Layer-structured transition metal dichalcogenides (LS-TMDs) are being heavily studied in K-ion batteries (KIBs) owing to their structural uniqueness and interesting electrochemical mechanisms. Synthetic methods are designed primarily focusing on high capacities. The achieved performance is often the collective results of several contributing factors. It is important to decouple the factors and understand their functions individually. This work presents a study focusing on an individual factor, crystallinity, by taking MoS as a demonstrator. The performance of low and high-crystallized MoS is compared to show the function of crystallinity is dependent on the electrochemical mechanism. Lower crystallinity can alleviate diffusional limitation in 0.5-3.0 V, where intercalation reaction takes charge in storing K-ions. Higher crystallinity can ensure the structural stability of the MoS layers and promote surface charge storage in 0.01-3.0 V, where conversion reaction mainly contributes. The low-crystallized MoS exhibits an intercalation capacity (118 mAh g ), good cyclability (85% over 100 cycles), and great rate capability (41 mAh g at 2 A g ), and the high-crystallized MoS delivers a high capacity of 330 mAh g at 1 A g and retains 161 mAh g at 20 A g , being one of the best among the reported LS-TMDs in KIBs.
层状结构过渡金属二硫属化物(LS-TMDs)因其结构独特性和有趣的电化学机制而在钾离子电池(KIBs)中受到广泛研究。合成方法主要围绕高容量进行设计。所取得的性能往往是多种因素共同作用的结果。将这些因素分离并单独了解它们的作用很重要。这项工作以MoS为示例,专注于单个因素——结晶度展开研究。比较了低结晶度和高结晶度MoS的性能,以表明结晶度的作用取决于电化学机制。较低的结晶度可以缓解0.5 - 3.0 V范围内的扩散限制,在此范围内嵌入反应负责存储钾离子。较高的结晶度可以确保MoS层的结构稳定性,并促进0.01 - 3.0 V范围内的表面电荷存储,在此范围内转化反应起主要作用。低结晶度的MoS表现出嵌入容量(118 mAh g)、良好的循环稳定性(100次循环后为85%)和出色的倍率性能(2 A g时为41 mAh g),而高结晶度的MoS在1 A g时具有330 mAh g的高容量,在20 A g时保持161 mAh g,是报道的KIBs中LS-TMDs里性能最佳的之一。