Xu Yang, Bahmani Farzaneh, Zhou Min, Li Yueliang, Zhang Chenglin, Liang Feng, Kazemi Sayed Habib, Kaiser Ute, Meng Guowen, Lei Yong
Fachgebiet Angewandte Nanophysik, Institut für Physik & ZMN MacroNano (ZIK), Technische Universität Ilmenau, Ilmenau 98693, Germany.
Nanoscale Horiz. 2019 Jan 1;4(1):202-207. doi: 10.1039/c8nh00305j. Epub 2018 Oct 18.
Defect and interlayer engineering is applied to exploit the large van der Waals gaps of transition metal dichalcogenides for potassium-ion batteries (KIBs). As a demonstrator, MoS nanoflowers with expanded interlayer spacing and defects in the basal planes are used as KIB anodes in the voltage range of 0.5-2.5 V, where an intercalation reaction rather than a conversion reaction takes place to store K-ions in the van der Waals gaps. The nanoflowers show enhanced K-storage performance compared to the defect-free counterpart that has a pristine interlayer spacing. Kinetic analysis verifies that the K-ion diffusion coefficient and surface charge storage are both enhanced in the applied voltage range of the intercalation reaction. The collective effects of expanded interlayer spacing and additionally exposed edges induced by the in-plane defects enable facile K-ion intercalation, rapid K-ion transport and promoted surface K-ion adsorption simultaneously.
缺陷和层间工程被应用于利用过渡金属二硫属化物的大范德华间隙来制造钾离子电池（KIB）。作为一个示例，具有扩大的层间距和基面缺陷的MoS纳米花被用作0.5 - 2.5 V电压范围内的KIB阳极，在此电压范围内发生嵌入反应而非转化反应，以在范德华间隙中存储钾离子。与具有原始层间距的无缺陷对应物相比，纳米花表现出增强的钾存储性能。动力学分析证实，在嵌入反应的施加电压范围内，钾离子扩散系数和表面电荷存储都得到了增强。层间距扩大和由面内缺陷引起的额外暴露边缘的共同作用，使得钾离子能够轻松嵌入、快速传输并促进表面钾离子吸附。
