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基于αP和βP的高性能场效应晶体管。

High-Performance Field-Effect Transistors Based on αP and βP.

作者信息

Montes Enrique, Schwingenschlögl Udo

机构信息

King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering (PSE), Thuwal, 23955-6900, Saudi Arabia.

出版信息

Adv Mater. 2019 May;31(18):e1807810. doi: 10.1002/adma.201807810. Epub 2019 Mar 25.

Abstract

The electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction-free field-effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first-principles calculations and the nonequilibrium Green's function method, the proposed field-effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances.

摘要

对黑磷和蓝磷纳米带的电子特性进行了研究,这使得能够提出无结场效应晶体管的方案,该晶体管由金属扶手椅形纳米带作为电极,中间是作为沟道材料的半导体锯齿形纳米带(从单层黑磷或蓝磷的单片中切割出来)。使用第一性原理计算和非平衡格林函数方法,对所提出的场效应晶体管进行了表征。结果发现,有可能实现出色的性能,具有高开关比、低亚阈值摆幅和高跨导。

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