Kim Sang-Kon
The Faculty of Liberal Arts, Hongik University, Seoul 04066, Korea.
Micromachines (Basel). 2021 Nov 30;12(12):1493. doi: 10.3390/mi12121493.
Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature size. For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. In this paper, for causes of LER, a modeling of EUVL processes with 5-nm pattern performance was introduced using Monte Carlo method by describing the stochastic fluctuation of exposure due to photon-shot noise and resist blur. LER impacts on FinFET performance were investigated using a compact device method. Electric potential and drain current with fin-width roughness (FWR) based on LER and line-width roughness (LWR) were fluctuated regularly and quantized as performance degradation of FinFETs.
尽管极紫外光刻（EUVL）有潜力在半导体制造中实现5纳米半间距分辨率，但它面临着许多持续存在的挑战。线边缘粗糙度（LER）是严重影响关键尺寸（CD）和器件性能的关键问题之一，因为LER不会随着特征尺寸的缩小而按比例缩小。对于LER的产生及其影响，更好地理解EUVL工艺机制以及LER对鳍式场效应晶体管（FinFET）性能的影响，对于新型光刻胶材料和晶体管结构的开发至关重要。在本文中，针对LER的成因，通过描述由于光子散粒噪声和光刻胶模糊导致的曝光随机波动，采用蒙特卡罗方法引入了具有5纳米图案性能的EUVL工艺建模。使用紧凑器件方法研究了LER对FinFET性能的影响。基于LER和线宽粗糙度（LWR）的鳍宽度粗糙度（FWR）导致的电势和漏极电流会有规律地波动，并被量化为FinFET性能的下降。
