Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.
Nanotechnology. 2019 Aug 2;30(31):315704. doi: 10.1088/1361-6528/ab13ff. Epub 2019 Mar 27.
High uniformity of un-doped and Ni-doped CuSe nanowires have been fabricated by smelting the bulk and injecting the molten liquid into the anodic aluminum oxide (AAO) template. The Ni dopant concentration and morphology of CuSe nanowires can be well controlled via preparing the bulk materials and the channel size of the AAO template, respectively. The cathodoluminescence peaks of the un-doped, 0.5 at% and 1.0 at% Ni-doped CuSe nanowires showed a redshift of about 26 nm and 42 nm, respectively, from un-doped CuSe nanowires (579 nm). Furthermore, above room temperature ferromagnetism was observed in 1.0 at% Ni-doped CuSe nanowires at 300 K. The facile injection molding method fabricated nanowires with tunable optical and magnetic properties which could be applied to prepare various nanomaterials for spintronic devices in the future.
通过熔炼块体并将熔融液体注入到阳极氧化铝（AAO）模板中，制备出了具有高均匀性的未掺杂和 Ni 掺杂 CuSe 纳米线。通过制备块体材料和 AAO 模板的通道尺寸，可以很好地控制 Ni 掺杂剂浓度和 CuSe 纳米线的形态。未掺杂、0.5 at%和 1.0 at% Ni 掺杂 CuSe 纳米线的阴极发光峰分别相对于未掺杂 CuSe 纳米线（579nm）红移了约 26nm 和 42nm。此外，在 300K 时，在 1.0 at% Ni 掺杂 CuSe 纳米线中观察到了高于室温的铁磁性。这种易于实施的注塑成型方法制备出的纳米线具有可调谐的光学和磁性能，可用于制备未来用于自旋电子器件的各种纳米材料。
