Luo Zhaochu, Dao Trong Phuong, Hrabec Aleš, Vijayakumar Jaianth, Kleibert Armin, Baumgartner Manuel, Kirk Eugenie, Cui Jizhai, Savchenko Tatiana, Krishnaswamy Gunasheel, Heyderman Laura J, Gambardella Pietro
Laboratory for Mesoscopic Systems, Department of Materials, ETH Zurich, 8093 Zurich, Switzerland.
Paul Scherrer Institut, 5232 Villigen PSI, Switzerland.
Science. 2019 Mar 29;363(6434):1435-1439. doi: 10.1126/science.aau7913.
Magnetically coupled nanomagnets have multiple applications in nonvolatile memories, logic gates, and sensors. The most effective couplings have been found to occur between the magnetic layers in a vertical stack. We achieved strong coupling of laterally adjacent nanomagnets using the interfacial Dzyaloshinskii-Moriya interaction. This coupling is mediated by chiral domain walls between out-of-plane and in-plane magnetic regions and dominates the behavior of nanomagnets below a critical size. We used this concept to realize lateral exchange bias, field-free current-induced switching between multistate magnetic configurations as well as synthetic antiferromagnets, skyrmions, and artificial spin ices covering a broad range of length scales and topologies. Our work provides a platform to design arrays of correlated nanomagnets and to achieve all-electric control of planar logic gates and memory devices.
磁耦合纳米磁体在非易失性存储器、逻辑门和传感器中有多种应用。已发现最有效的耦合发生在垂直堆叠的磁性层之间。我们利用界面Dzyaloshinskii-Moriya相互作用实现了横向相邻纳米磁体的强耦合。这种耦合由面外和面内磁性区域之间的手性畴壁介导，并主导低于临界尺寸的纳米磁体的行为。我们利用这一概念实现了横向交换偏置、多态磁配置之间的无场电流诱导切换以及涵盖广泛长度尺度和拓扑结构的合成反铁磁体、斯格明子和人工自旋冰。我们的工作提供了一个平台，用于设计相关纳米磁体阵列，并实现平面逻辑门和存储器件的全电控制。
