Meng Keng-Yuan, Ahmed Adam S, Baćani Mirko, Mandru Andrada-Oana, Zhao Xue, Bagués Núria, Esser Bryan D, Flores Jose, McComb David W, Hug Hans J, Yang Fengyuan
Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States.
Empa , Swiss Federal Laboratories for Materials Science and Technology , Dübendorf CH-8600 , Switzerland.
Nano Lett. 2019 May 8;19(5):3169-3175. doi: 10.1021/acs.nanolett.9b00596. Epub 2019 Apr 3.
Skyrmion imaging and electrical detection via topological Hall (TH) effect are two primary techniques for probing magnetic skyrmions, which hold promise for next-generation magnetic storage. However, these two kinds of complementary techniques have rarely been employed to investigate the same samples. We report the observation of nanoscale skyrmions in SrIrO/SrRuO (SIO/SRO) bilayers in a wide temperature range from 10 to 100 K. The SIO/SRO bilayers exhibit a remarkable TH effect, which is up to 200% larger than the anomalous Hall (AH) effect at 5 K, and zero-field TH effect at 90 K. Using variable-temperature, high-field magnetic force microscopy (MFM), we imaged skyrmions as small as 10 nm, which emerge in the same field ranges as the TH effect. These results reveal a rich space for skyrmion exploration and tunability in oxide heterostructures.
通过拓扑霍尔（TH）效应进行斯格明子成像和电学检测是探测磁性斯格明子的两种主要技术，这两种技术有望应用于下一代磁存储。然而，这两种互补技术很少被用于研究相同的样品。我们报告了在10至100 K的宽温度范围内，在SrIrO/SrRuO（SIO/SRO）双层中观察到纳米级斯格明子。SIO/SRO双层表现出显著的TH效应，在5 K时比反常霍尔（AH）效应大200%，在90 K时表现出零场TH效应。使用变温、高场磁力显微镜（MFM），我们对小至10 nm的斯格明子进行了成像，这些斯格明子出现在与TH效应相同的磁场范围内。这些结果揭示了氧化物异质结构中斯格明子探索和可调性的丰富空间。
