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电子不均匀性对与5d钙钛矿外延界面的SrRuO异常霍尔电阻率回线的影响。

Electronic Inhomogeneity Influence on the Anomalous Hall Resistivity Loops of SrRuO Epitaxially Interfaced with 5d Perovskites.

作者信息

Wysocki Lena, Schöpf Jörg, Ziese Michael, Yang Lin, Kovács András, Jin Lei, Versteeg Rolf B, Bliesener Andrea, Gunkel Felix, Kornblum Lior, Dittmann Regina, van Loosdrecht Paul H M, Lindfors-Vrejoiu Ionela

机构信息

Institute of Physics II, University of Cologne, 50937 Cologne, Germany.

Felix Bloch Institute for Solid State Physics, University of Leipzig, 04109 Leipzig, Germany.

出版信息

ACS Omega. 2020 Mar 10;5(11):5824-5833. doi: 10.1021/acsomega.9b03996. eCollection 2020 Mar 24.

Abstract

SrRuO, a 4d ferromagnet with multiple Weyl nodes at the Fermi level, offers a rich playground to design epitaxial heterostructures and superlattices with fascinating magnetic and magnetotransport properties. Interfacing ultrathin SrRuO layers with large spin-orbit coupling 5d transition-metal oxides, such as SrIrO, results in pronounced peaklike anomalies in the magnetic field dependence of the Hall resistivity. Such anomalies have been attributed either to the formation of Néel-type skyrmions or to modifications of the Berry curvature of the topologically nontrivial conduction bands near the Fermi level of SrRuO. Here, epitaxial multilayers based on SrRuO interfaced with 5d perovskite oxides, such as SrIrO and SrHfO, were studied. This work focuses on the magnetotransport properties of the multilayers, aiming to unravel the role played by the interfaces with 5d perovskites in the peaklike anomalies of the Hall resistance loops of SrRuO layers. Interfacing with large band gap insulating SrHfO layers did not influence the anomalous Hall resistance loops, while interfacing with the nominally paramagnetic semimetal SrIrO resulted in pronounced peaklike anomalies, which have been lately attributed to a topological Hall effect contribution as a result of skyrmions. This interpretation is, however, under strong debate and lately alternative causes, such as inhomogeneity of the thickness and the electronic properties of the SrRuO layers, have been considered. Aligned with these latter proposals, our findings reveal the central role played in the anomalies of the Hall resistivity loops by electronic inhomogeneity of SrRuO layers due to the interfacing with semimetallic 5d SrIrO.

摘要

SrRuO₃是一种在费米能级具有多个外尔节点的4d铁磁体,为设计具有迷人磁性和磁输运特性的外延异质结构和超晶格提供了一个丰富的研究平台。将超薄的SrRuO₃层与具有大自旋轨道耦合的5d过渡金属氧化物(如SrIrO₃)相接触,会导致霍尔电阻率的磁场依赖性出现明显的峰状异常。这种异常现象要么归因于奈尔型斯格明子的形成,要么归因于SrRuO₃费米能级附近拓扑非平凡导带的贝里曲率的改变。在此,研究了基于SrRuO₃与5d钙钛矿氧化物(如SrIrO₃和SrHfO₃)相接触的外延多层膜。这项工作聚焦于多层膜的磁输运特性,旨在揭示与5d钙钛矿的界面在SrRuO₃层霍尔电阻回线的峰状异常中所起的作用。与大带隙绝缘的SrHfO₃层相接触不会影响异常霍尔电阻回线,而与名义上顺磁的半金属SrIrO₃相接触则会导致明显的峰状异常,最近这种异常被归因于斯格明子引起的拓扑霍尔效应贡献。然而,这种解释存在激烈的争论,最近也考虑了其他原因,如SrRuO₃层厚度和电子性质的不均匀性。与这些后一种观点一致,我们的研究结果揭示了由于与半金属5d SrIrO₃相接触导致的SrRuO₃层电子不均匀性在霍尔电阻率回线异常中所起的核心作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c92e/7097901/6f0a41019f24/ao9b03996_0002.jpg

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