Zheng Dongxing, Fang Yue-Wen, Zhang Senfu, Li Peng, Wen Yan, Fang Bin, He Xin, Li Yan, Zhang Chenhui, Tong Wenyi, Mi Wenbo, Bai Haili, Alshareef Husam N, Qiu Zi Qiang, Zhang Xixiang
Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, China.
ACS Nano. 2021 Mar 23;15(3):5086-5095. doi: 10.1021/acsnano.0c10200. Epub 2021 Feb 19.
The Berry phase, which reveals the intimate geometrical structure underlying quantum mechanics, plays a central role in the anomalous Hall effect. In this work, we observed a sign change of Berry curvatures at the interface between the ferromagnet SrRuO (SRO) layer and the SrIrO (SIO) layer with strong spin-orbit coupling. The negative Berry curvature at the interface, induced by the strongly spin-orbit-coupled Ir 5d bands near the Fermi level, makes the SRO/SIO interface different from the SRO layer that has a positive Berry curvature. These opposite Berry curvatures led to two anomalous Hall effect (AHE) channels with opposite signs at the SRO/SIO interface and in the SRO layer, respectively, resulting in a hump-like feature in the Hall resistivity loop. This observation offers a straightforward explanation of the hump-like feature that is usually associated with the chiral magnetic structure or magnetic skyrmions. Hence, this study provides evidence to oppose the widely accepted claim that magnetic skyrmions induce the hump-like feature.
贝里相位揭示了量子力学背后的紧密几何结构,在反常霍尔效应中起着核心作用。在这项工作中,我们观察到在具有强自旋轨道耦合的铁磁体SrRuO(SRO)层和SrIrO(SIO)层之间的界面处贝里曲率的符号变化。界面处的负贝里曲率由费米能级附近强自旋轨道耦合的Ir 5d能带诱导产生,使得SRO/SIO界面不同于具有正贝里曲率的SRO层。这些相反的贝里曲率分别在SRO/SIO界面和SRO层中导致了两个符号相反的反常霍尔效应(AHE)通道,从而在霍尔电阻率回线中产生了驼峰状特征。这一观察结果为通常与手性磁结构或磁斯格明子相关的驼峰状特征提供了直接解释。因此,本研究提供了证据,反对磁斯格明子诱导驼峰状特征这一被广泛接受的观点。