Endo Kazuhiro, Arisawa Shunichi, Badica Petre
Kanazawa Institute of Technology, Hakusan, Ishikawa 924-0838, Japan.
National Institute of Materials Science, Tsukuba, Ibaraki 305-0047, Japan.
Materials (Basel). 2019 Apr 5;12(7):1124. doi: 10.3390/ma12071124.
Thin films of (117) Bi₂Sr₂Ca₂CuO (Bi-2212) were grown by Molecular Organic Chemical Vapor Deposition (MOCVD) on (110) SrTiO₃ and (110) LaAlO₃ substrates. Substrates were vicinal with off angles up to 20°. Films are 3D epitaxial and X-ray diffraction - scans demonstrate that, while the films grown on a flat substrate are composed of twinned grains, the films on vicinal substrate are . A higher quality is obtained if growth is performed at two temperatures: Growth starts at 550⁻600 °C and continues at 700⁻750 °C. The twin-free film grown by the two-temperature method shows a zero-resistance critical temperature of 37 and 32 K when the measuring current is applied in-plane parallel and perpendicular to [001] direction of the substrate. Twin-free non -axis thin films are promising for fabrication of novel planar THz devices.
通过分子有机化学气相沉积（MOCVD）在（110）SrTiO₃和（110）LaAlO₃衬底上生长了（117）Bi₂Sr₂Ca₂CuO（Bi - 2212）薄膜。衬底是倾斜的，倾斜角高达20°。薄膜是三维外延的，X射线衍射扫描表明，虽然在平坦衬底上生长的薄膜由孪晶晶粒组成，但在倾斜衬底上的薄膜是……如果在两个温度下进行生长，则可获得更高的质量：生长在550⁻600°C开始，并在700⁻750°C继续。当测量电流沿面内平行和垂直于衬底的[001]方向施加时，通过双温法生长的无孪晶薄膜显示出37 K和32 K的零电阻临界温度。无孪晶非轴向薄膜有望用于制造新型平面太赫兹器件。
