Direct Deposition of Crystalline TaN Thin Films on FTO for PEC Water Splitting.

Tantalum nitride is a promising photoanode material for solar water splitting, but further study and practical use are constrained by the harsh conditions of the synthesis from Ta metal. Here, we report the direct deposition of crystalline TaN on fluorine-doped tin oxide (FTO) substrate via a custom-built atomic layer deposition (ALD) system. A combination of TaCl (Ta precursor) and ammonia (N source) was sequentially pulsed into the ALD reactor with the substrate heated to 550 °C to deposit compact and thin films of TaN with controllable thicknesses on FTO substrates. Importantly, it is shown that the FTO is chemically and structurally stable under the reducing conditions of ammonia at 550 °C. These electrodes produced an exceptional photocurrent onset potential of ∼0.3 V versus reversible hydrogen electrode (RHE) with a maximum photocurrent of ∼2.4 mA cm at 1.23 V versus RHE. Results of photoelectrochemical investigations as a function of film thickness and illumination direction reveal that the performance of TaN is controlled by a hole diffusion length of ∼50 nm. These results are crucial for the successful integration of TaN in efficient unassisted water-splitting applications.