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无序对半导体聚合物热电性能的影响。

Effects of Disorder on Thermoelectric Properties of Semiconducting Polymers.

作者信息

Upadhyaya Meenakshi, Boyle Connor J, Venkataraman Dhandapani, Aksamija Zlatan

机构信息

Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA, 01003-9292, USA.

Department of Chemistry, University of Massachusetts Amherst, Amherst, MA, 01003-9292, USA.

出版信息

Sci Rep. 2019 Apr 9;9(1):5820. doi: 10.1038/s41598-019-42265-z.

Abstract

Organic materials have attracted recent interest as thermoelectric (TE) converters due to their low cost and ease of fabrication. We examine the effects of disorder on the TE properties of semiconducting polymers based on the Gaussian disorder model (GDM) for site energies while employing Pauli's master equation approach to model hopping between localized sites. Our model is in good agreement with experimental results and a useful tool to study hopping transport. We show that stronger overlap between sites can improve the electrical conductivity without adversely affecting the Seebeck coefficient. We find that positional disorder aids the formation of new conduction paths with an increased probability of carriers in high energy sites, leading to an increase in electrical conductivity while leaving the Seebeck unchanged. On the other hand, energetic disorder leads to increased energy gaps between sites, hindering transport. This adversely affects conductivity while only slightly increasing Seebeck and results in lower TE power factors. Furthermore, positional correlation primarily affects conductivity, while correlation in site energies has no effect on TE properties of polymers. Our results also show that the Lorenz number increases with Seebeck coefficient, largely deviating from the Sommerfeld value, in agreement with experiments and in contrast to band conductors. We conclude that reducing energetic disorder and positional correlation, while increasing positional disorder can lead to higher TE power factors.

摘要

由于有机材料成本低且易于制造,近年来它们作为热电(TE)转换器受到了关注。我们基于位点能量的高斯无序模型(GDM)研究无序对半导体聚合物TE性能的影响,同时采用泡利主方程方法对局域位点之间的跳跃进行建模。我们的模型与实验结果吻合良好,是研究跳跃输运的有用工具。我们表明,位点之间更强的重叠可以提高电导率,而不会对塞贝克系数产生不利影响。我们发现,位置无序有助于形成新的传导路径,高能位点中载流子的概率增加,导致电导率增加,而塞贝克系数不变。另一方面,能量无序导致位点之间的能隙增加,阻碍输运。这对电导率产生不利影响,同时仅略微增加塞贝克系数,并导致较低的TE功率因数。此外,位置相关性主要影响电导率,而位点能量的相关性对聚合物的TE性能没有影响。我们的结果还表明,洛伦兹数随塞贝克系数增加,与索末菲值有很大偏差,这与实验结果一致,与能带导体相反。我们得出结论,减少能量无序和位置相关性,同时增加位置无序可以导致更高的TE功率因数。

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