Ryynänen Tomi, Pelkonen Anssi, Grigoras Kestutis, Ylivaara Oili M E, Hyvärinen Tanja, Ahopelto Jouni, Prunnila Mika, Narkilahti Susanna, Lekkala Jukka
Micro- and Nanosystems Research Group, BioMediTech Institute and Faculty of Medicine and Health Technology, Tampere University, Tampere, Finland.
NeuroGroup, BioMediTech Institute and Faculty of Medicine and Health Technology, Tampere University, Tampere, Finland.
Front Neurosci. 2019 Mar 22;13:226. doi: 10.3389/fnins.2019.00226. eCollection 2019.
Low noise platinum black or sputtered titanium nitride (TiN) microelectrodes are typically used for recording electrical activity of neuronal or cardiac cell cultures. Opaque electrodes and tracks, however, hinder the visibility of the cells when imaged with inverted microscope, which is the standard method of imaging cells plated on microelectrode array (MEA). Even though transparent indium tin oxide (ITO) electrodes exist, they cannot compete in impedance and noise performance with above-mentioned opaque counterparts. In this work, we propose atomic layer deposition (ALD) as the method to deposit TiN electrodes and tracks which are thin enough (25-65 nm) to be transparent (transmission ∼18-45%), but still benefit from the columnar structure of TiN, which is the key element to decrease noise and impedance of the electrodes. For ALD TiN electrodes (diameter 30 μm) impedances from 510 to 590 kΩ were measured at 1 kHz, which is less than the impedance of bare ITO electrodes. Human induced pluripotent stem cell (hiPSC)-derived cortical neurons were cultured on the ALD TiN MEAs for 14 days without observing any biocompatibility issues, and spontaneous electrical activity of the neurons was recorded successfully. The results show that transparent ALD TiN film is a suitable electrode material for producing functional MEAs.
低噪声铂黑或溅射氮化钛(TiN)微电极通常用于记录神经元或心脏细胞培养物的电活动。然而,不透明的电极和轨迹在用倒置显微镜成像时会阻碍细胞的可见性,而倒置显微镜是对微电极阵列(MEA)上培养的细胞进行成像的标准方法。尽管存在透明的氧化铟锡(ITO)电极,但它们在阻抗和噪声性能方面无法与上述不透明电极相竞争。在这项工作中,我们提出采用原子层沉积(ALD)方法来沉积TiN电极和轨迹,其厚度足够薄(25 - 65纳米)以实现透明(透过率约为18 - 45%),但仍能受益于TiN的柱状结构,这是降低电极噪声和阻抗的关键因素。对于ALD TiN电极(直径30微米),在1千赫兹时测得的阻抗为510至590千欧,低于裸ITO电极的阻抗。人诱导多能干细胞(hiPSC)衍生的皮质神经元在ALD TiN MEA上培养14天,未观察到任何生物相容性问题,并成功记录了神经元的自发电活动。结果表明,透明的ALD TiN薄膜是生产功能性MEA的合适电极材料。