Wu Zhengyuan, Jiang Zhuoxun, Song Pengyu, Tian Pengfei, Hu Laigui, Liu Ran, Fang Zhilai, Kang Junyong, Zhang Tong-Yi
Engineering Research Center of Advanced Lighting Technology, Ministry of Education, and Academy for Engineering and Technology, Fudan University, Shanghai, 200433, China.
Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China.
Small. 2019 May;15(19):e1900580. doi: 10.1002/smll.201900580. Epub 2019 Apr 10.
2D β-Ga O nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high-temperature gas sensors, solar-blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well-controlled orientation have not been reported yet. The present study demonstrates how to grow single-crystalline ultrathin quasi-hexagonal β-Ga O nanosheets with nanowire seeds and proposes a hierarchy-oriented growth mechanism. The hierarchy-oriented growth is initiated by epitaxial growth of a single-crystalline β-Ga O nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi-hexagonal (010) β-Ga O nanosheets. The undoped 2D (010) β-Ga O nanosheet field effect transistor has a field-effect electron mobility of 38 cm V s and an on/off current ratio of 10 with an average subthreshold swing of 150 mV dec . The from-nanowires-to-nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well.
二维β-Ga₂O₃纳米片作为基础材料，在下一代紫外透明电极、高温气体传感器、日盲光电探测器和功率器件方面具有巨大潜力，然而其高质量晶体结构和取向可控的合成与生长尚未见报道。本研究展示了如何利用纳米线籽晶生长单晶超薄准六边形β-Ga₂O₃纳米片，并提出了一种取向分级生长机制。取向分级生长由GaN纳米晶体上的单晶β-Ga₂O₃纳米线的外延生长引发，随后是准六边形（010）β-Ga₂O₃纳米片的同质外延生长。未掺杂的二维（010）β-Ga₂O₃纳米片场效应晶体管的场效应电子迁移率为38 cm² V⁻¹ s⁻¹，开/关电流比为10，平均亚阈值摆幅为150 mV dec⁻¹。从纳米线到纳米片的技术为纳米片的制备开辟了一条新途径，这对纳米材料合成与生长领域以及纳米电子学领域都有重大影响。
