Shangguan Lei, He Long-Bing, Dong Sheng-Pan, Gao Yu-Tian, Sun Qian, Zhu Jiong-Hao, Hong Hua, Zhu Chao, Yang Zai-Xing, Sun Li-Tao
SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
SEU-AMTE Collaborative Center for Atomic Layer Deposition and Etching, Southeast University, Wuxi 214000, China.
Nanomaterials (Basel). 2023 Oct 13;13(20):2756. doi: 10.3390/nano13202756.
-GaO nanostructures are attractive wide-band-gap semiconductor materials as they exhibit promising photoelectric properties and potential applications. Despite the extensive efforts on -GaO nanowires, investigations into -GaO nanotubes are rare since the tubular structures are hard to synthesize. In this paper, we report a facile method for fabricating -GaO nanotubes using pre-synthesized GaSb nanowires as sacrificial templates. Through a two-step heating-treatment strategy, the GaSb nanowires are partially oxidized to form -GaO shells, and then, the residual inner parts are removed subsequently in vacuum conditions, yielding delicate hollow -GaO nanotubes. The length, diameter, and thickness of the nanotubes can be customized by using different GaSb nanowires and heating parameters. In situ transmission electron microscopic heating experiments are performed to reveal the transformation dynamics of the -GaO nanotubes, while the Kirkendall effect and the sublimation process are found to be critical. Moreover, photoelectric tests are carried out on the obtained -GaO nanotubes. A photoresponsivity of ~25.9 A/W and a detectivity of ~5.6 × 10 Jones have been achieved with a single--GaO-nanotube device under an excitation wavelength of 254 nm.
氧化镓纳米结构是具有吸引力的宽带隙半导体材料，因为它们展现出有前景的光电特性和潜在应用。尽管在氧化镓纳米线方面付出了大量努力，但由于管状结构难以合成，对氧化镓纳米管的研究很少。在本文中，我们报告了一种使用预先合成的锑化镓纳米线作为牺牲模板来制备氧化镓纳米管的简便方法。通过两步热处理策略，锑化镓纳米线被部分氧化形成氧化镓壳层，然后，残余的内部部分随后在真空条件下被去除，从而得到精致的中空氧化镓纳米管。纳米管的长度、直径和厚度可以通过使用不同的锑化镓纳米线和加热参数来定制。进行了原位透射电子显微镜加热实验以揭示氧化镓纳米管的转变动力学，同时发现柯肯达尔效应和升华过程至关重要。此外，对所获得的氧化镓纳米管进行了光电测试。在254nm激发波长下，单个氧化镓纳米管器件实现了约25.9A/W的光响应率和约5.6×10琼斯的探测率。
