Zhao Xiaofeng, Wang Ying, Wen Dianzhong
The Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China.
Micromachines (Basel). 2019 Apr 9;10(4):238. doi: 10.3390/mi10040238.
A silicon-on-insulator (SOI) piezoresistive three-axis acceleration sensor, consisting of four L-shaped beams, two intermediate double beams, two masses, and twelve piezoresistors, was presented in this work. To detect the acceleration vector (a, a, and a) along three directions, twelve piezoresistors were designed on four L-shaped beams and two intermediate beams to form three detecting Wheatstone bridges. A sensitive element simulation model was built using ANSYS finite element simulation software to investigate the cross-interference of sensitivity for the proposed sensor. Based on that, the sensor chip was fabricated on a SOI wafer by using microelectromechanical system (MEMS) technology and packaged on a printed circuit board (PCB). At room temperature and = 5.0 V, the sensitivities of the sensor along -axis, -axis, and -axis were 0.255 mV/g, 0.131 mV/g, and 0.404 mV/g, respectively. The experimental results show that the proposed sensor can realize the detection of acceleration along three directions.
本文介绍了一种绝缘体上硅（SOI）压阻式三轴加速度传感器，它由四个L形梁、两个中间双梁、两个质量块和十二个压阻器组成。为了检测沿三个方向的加速度矢量（ax、ay和az），在四个L形梁和两个中间梁上设计了十二个压阻器，以形成三个检测惠斯通电桥。利用ANSYS有限元模拟软件建立了敏感元件模拟模型，研究了该传感器灵敏度的交叉干扰。在此基础上，采用微机电系统（MEMS）技术在SOI晶圆上制造了传感器芯片，并将其封装在印刷电路板（PCB）上。在室温及V = 5.0 V条件下，该传感器沿x轴、y轴和z轴的灵敏度分别为0.255 mV/g、0.131 mV/g和0.404 mV/g。实验结果表明，该传感器能够实现沿三个方向的加速度检测。
