Wei Renbo, Wang Jialing, Zhang Hongxing, Han Weihua, Liu Xiaobo
Research Branch of Advanced Functional Materials, School of Microelectronics and Solid-State Electronics, High Temperature Resistant Polymer and Composites Key Laboratory of Sichuan Province, University of Electronic Science and Technology of China, Chengdu 610054, China.
Polymers (Basel). 2017 Aug 4;9(8):342. doi: 10.3390/polym9080342.
We report the fabrication and improved properties of crosslinked polyarylene ether nitrile (CPEN) interpenetrating with a zinc ion bridged graphene sheet (GS) and carbon nanotube (CNT) network (GS-Zn-CNT) (CPEN/GS-Zn-CNT). Graphene oxide (GO) and acidulated CNT were firstly prepared and then coordinated with zinc ions to form the zinc ion bridged GO and CNT network (GO-Zn-CNT). The mass ratio of GO and acidulated CNT in GO-Zn-CNT was controlled to be 1:3 and the optimized content of Zn was Zn/C = 0.01 mmol/mg (mole of zinc acetate/total weight of GO and acidulated CNT). Phthalonitrile end-capped polyarylene ether nitrile (PEN-Ph) permeated into the GO-Zn-CNT in -methyl-2-pyrrolidone (NMP) and the corresponding composite PEN/GO-Zn-CNT was fabricated through the solution-casting method. After thermal annealing at 230 °C for 1 h and further curing at 320 °C for 2 h, the GO in GO-Zn-CNT was partly reduced into GS, and PEN-Ph was crosslinked, offering the CPEN/GS-Zn-CNT. The mechanical, thermal, and electrical properties of the obtained CPEN/GS-Zn-CNT were investigated in detail. The glass transition temperature, relative permittivity, and tensile strength of CPEN/GS-Zn-CNT with 2.0 wt % GS-Zn-CNT, compared to that of PEN, were increased by 18%, 181%, and 27%, respectively. The CPEN/GS-Zn-CNT based composite is a potential candidate as material in high performance electronic devices.
我们报道了交联聚亚芳基醚腈(CPEN)与锌离子桥联石墨烯片(GS)和碳纳米管(CNT)网络(GS-Zn-CNT)互穿(CPEN/GS-Zn-CNT)的制备及其性能的改善。首先制备氧化石墨烯(GO)和酸化碳纳米管,然后与锌离子配位形成锌离子桥联的GO和CNT网络(GO-Zn-CNT)。将GO-Zn-CNT中GO与酸化碳纳米管的质量比控制为1:3,锌的优化含量为Zn/C = 0.01 mmol/mg(醋酸锌的摩尔数/GO和酸化碳纳米管的总重量)。邻苯二甲腈封端的聚亚芳基醚腈(PEN-Ph)在N-甲基-2-吡咯烷酮(NMP)中渗透到GO-Zn-CNT中,并通过溶液浇铸法制备了相应的复合PEN/GO-Zn-CNT。在230℃热退火1小时并在320℃进一步固化2小时后,GO-Zn-CNT中的GO部分还原为GS,并且PEN-Ph交联,得到CPEN/GS-Zn-CNT。详细研究了所得CPEN/GS-Zn-CNT的力学、热学和电学性能。与PEN相比,含有2.0 wt%GS-Zn-CNT的CPEN/GS-Zn-CNT的玻璃化转变温度、相对介电常数和拉伸强度分别提高了18%、181%和27%。基于CPEN/GS-Zn-CNT的复合材料是高性能电子器件中材料的潜在候选者。