Shaibo Jamal, Yang Rui, Wang Zhe, Huang He-Ming, Xiong Jue, Guo Xin
Key Laboratory of Material Processing and Die & Mould Technology, Laboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
Phys Chem Chem Phys. 2019 Apr 24;21(17):8843-8848. doi: 10.1039/c9cp00596j.
The low operating temperature and volatile characteristics of the magnetization change are the main obstacles for the practical applications of spintronic and magnetic memories. In this work, both the resistive switching and magnetization switching are realized in Pt/LaBaCo2O5+δ (LBCO)/Nb-doped SrTiO3 (Nb-STO) devices at room temperature through an electric field. Unlike the traditional approach of an external stress inducing a volatile magnetization change, the magnetization in the Pt/LBCO/Nb-STO device is modulated by an electrical field, along with the resistive switching. The resistive and magnetization switching can be attributed to the variation of the depletion layer width at the LBCO/Nb-STO interface via oxygen vacancy migration and the increase/decrease of the Co-O-Co bond length, respectively. The present device with the synchronous manipulation of both resistance and magnetization at room temperature can be applied in nonvolatile resistive memories and novel magnetic multifunctional devices.
磁化变化的低工作温度和挥发性特性是自旋电子学和磁存储器实际应用的主要障碍。在这项工作中，通过电场在室温下的Pt/LaBaCo2O5+δ（LBCO）/Nb掺杂SrTiO3（Nb-STO）器件中实现了电阻开关和磁化开关。与传统的外部应力诱导挥发性磁化变化的方法不同，Pt/LBCO/Nb-STO器件中的磁化是通过电场调制的，同时伴随着电阻开关。电阻和磁化开关分别可归因于通过氧空位迁移在LBCO/Nb-STO界面处耗尽层宽度的变化以及Co-O-Co键长的增加/减少。这种在室温下同时操纵电阻和磁化的当前器件可应用于非易失性电阻存储器和新型磁性多功能器件。
