Geremew A K, Kargar F, Zhang E X, Zhao S E, Aytan E, Bloodgood M A, Salguero T T, Rumyantsev S, Fedoseyev A, Fleetwood D M, Balandin A A
Nano-Device Laboratory, Department of Electrical and Computer Engineering, Materials Science and Engineering Program, University of California, Riverside, California 92521, USA.
Nanoscale. 2019 Apr 25;11(17):8380-8386. doi: 10.1039/c9nr01614g.
We demonstrate that charge-density-wave devices with quasi-two-dimensional 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 1014 H+cm-2. The current-voltage characteristics of these devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other two-dimensional devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" charge-density-wave devices is attributed to the quasi-2D nature of the electron transport in the nanoscale-thickness channel, high concentration of charge carriers in the utilized charge-density-wave phases, and two-dimensional device design. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
我们证明，具有准二维1T-TaS2通道的电荷密度波器件对1.8 MeV质子轰击具有显著的抗辐射能力，质子注量至少达到1014 H+cm-2。与大多数传统半导体器件或其他二维器件形成鲜明对比的是，这些器件的电流-电压特性不会因质子辐照而改变。在低频噪声谱中仅发现可忽略不计的变化。这些“全金属”电荷密度波器件的抗辐射能力归因于纳米级厚度通道中电子输运的准二维性质、所利用的电荷密度波相中高浓度的电荷载流子以及二维器件设计。这种能够在很宽温度范围内工作的器件，可以构成未来用于太空、粒子加速器和其他辐射环境的电子设备的关键部分。
