Zhao Weihao, Wang Lin, Pei Chengjie, Wei Cong, You Hui, Zhang Jindong, Li Hai
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China.
Nanomaterials (Basel). 2019 Apr 4;9(4):548. doi: 10.3390/nano9040548.
Recently, graphene oxide nanoscroll (GONS) has attracted much attention due to its excellent properties. Encapsulation of nanomaterials in GONS can greatly enhance its performance while ion encapsulation is still unexplored. Herein, various ions including hydronium ion (H₃O⁺), Fe, Au, and Zn were encapsulated in GONSs by molecular combing acidic graphene oxide (GO) solution. No GONS was obtained when the pH of the GO solution was greater than 9. A few GONSs without encapsulated ion were obtained at the pH of 5-8. When the pH decreased from 5 to 0.15, high-density GONSs with encapsulated ions were formed and the average height of GONS was increased from ~50 to ~190 nm. These results could be attributed to the varied repulsion between carboxylic acid groups located at the edges of GO nanosheets. Encapsulated metal ions were converted to nanoparticles in GONS after high-temperature annealing. The resistance-type device based on reduced GONS (rGONS) mesh with encapsulated H₃O⁺ showed good response for applied pressure from 600 to 8700 Pa, which manifested much better performance compared with that of a device based on rGONS mesh without H₃O⁺.
最近，氧化石墨烯纳米卷（GONS）因其优异的性能而备受关注。将纳米材料封装在GONS中可以大大提高其性能，而离子封装仍未得到探索。在此，通过分子梳理酸性氧化石墨烯（GO）溶液，将包括水合氢离子（H₃O⁺）、铁、金和锌在内的各种离子封装在GONS中。当GO溶液的pH值大于9时，未获得GONS。在pH值为5-8时，获得了一些没有封装离子的GONS。当pH值从5降至0.15时，形成了带有封装离子的高密度GONS，GONS的平均高度从约50nm增加到约190nm。这些结果可归因于位于GO纳米片边缘的羧酸基团之间不同的排斥力。高温退火后，封装在GONS中的金属离子转化为纳米颗粒。基于带有封装H₃O⁺的还原GONS（rGONS）网格的电阻型器件在600至8700Pa的外加压力下表现出良好的响应，与基于没有H₃O⁺的rGONS网格的器件相比，其性能要好得多。
