Wu Zhikang, Li Feifei, Li Xiya, Yang Yang, Huang Xiao, Li Hai
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China.
Nanomaterials (Basel). 2022 May 6;12(9):1581. doi: 10.3390/nano12091581.
Due to their unique tubular and spiral structure, graphene and graphene oxide nanoscrolls (GONS) have shown extensive applications in various fields. However, it is still a challenge to improve the optoelectronic application of graphene and GONS because of the zero bandgap of graphene. Herein, ammonium tetrathiomolybdate ((NH)MoS) was firstly wrapped into the ((NH)MoS@GONS) by molecular combing the mixture of (NH)MoS and GO solution on hydrophobic substrate. After thermal annealing, the (NH)MoS and GO were converted to MoS nanosheets and reduced GO (RGO) simultaneously, and, thus, the MoS@RGONS was obtained. Raman spectroscopy and high-resolution transmission electron microscopy were used to confirm the formation of MoS nanosheets among the RGONS. The amount of MoS wrapped in RGONS increased with the increasing height of GONS, which is confirmed by the atomic force microscopy and Raman spectroscopy. The as-prepared MoS@RGONS showed much better photoresponse than the RGONS under visible light. The photocurrent-to-dark current ratios of photodetectors based on MoS@RGONS are ~570, 360 and 140 under blue, red and green lasers, respectively, which are 81, 144 and 35 times of the photodetectors based on RGONS. Moreover, the MoS@RGONS-based photodetector exhibited good power-dependent photoresponse. Our work indicates that the MoS@RGONS is expected to be a promising material in the fields of optoelectronic devices and flexible electronics.
由于其独特的管状和螺旋结构，石墨烯和氧化石墨烯纳米卷（GONS）在各个领域都有广泛应用。然而，由于石墨烯的零带隙，提高石墨烯和GONS的光电应用仍然是一个挑战。在此，通过在疏水基底上对（NH₄）₂MoS₄和氧化石墨烯（GO）溶液的混合物进行分子梳理，首先将四硫代钼酸铵（（NH₄）₂MoS₄）包裹到（（NH₄）₂MoS₄@GONS）中。经过热退火后，（NH₄）₂MoS₄和GO同时转化为MoS₂纳米片和还原氧化石墨烯（RGO），从而得到MoS₂@RGO纳米卷。利用拉曼光谱和高分辨率透射电子显微镜证实了RGO纳米卷中MoS₂纳米片的形成。原子力显微镜和拉曼光谱证实，包裹在RGO纳米卷中的MoS₂的量随着GONS高度的增加而增加。所制备的MoS₂@RGO纳米卷在可见光下表现出比RGO纳米卷更好的光响应。基于MoS₂@RGO纳米卷的光电探测器在蓝色、红色和绿色激光下的光电流与暗电流之比分别约为570、360和140，分别是基于RGO纳米卷的光电探测器的81、144和35倍。此外，基于MoS₂@RGO纳米卷的光电探测器表现出良好的功率依赖性光响应。我们的工作表明，MoS₂@RGO纳米卷有望成为光电器件和柔性电子领域中有前景的材料。
