Lee Jimin, Choi Byoung-Soo, Kim Sang-Hwan, Lee Jewon, Lee Junwoo, Chang Seunghyuk, Park JongHo, Lee Sang-Jin, Shin Jang-Kyoo
School of Electronics Engineering, Kyungpook National University, 80 Deahak-ro, Buk-gu, Daegu 41566, Korea.
Center for Integrated Smart Sensors, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
Sensors (Basel). 2019 Apr 16;19(8):1823. doi: 10.3390/s19081823.
This paper presents the effects of offset pixel aperture width on the performance of monochrome (MONO) CMOS image sensors (CISs) for a three-dimensional image sensor. Using a technique to integrate the offset pixel aperture (OPA) inside each pixel, the depth information can be acquired using a disparity from OPA patterns. The OPA is classified into two pattern types: Left-offset pixel aperture (LOPA) and right-offset pixel aperture (ROPA). These OPAs are divided into odd and even rows and integrated in a pixel array. To analyze the correlation between the OPA width and the sensor characteristics, experiments were conducted by configuring the test elements group (TEG) regions. The OPA width of the TEG region for the measurement varied in the range of 0.3-0.5 μm. As the aperture width decreased, the disparity of the image increased, while the sensitivity decreased. It is possible to acquire depth information by the disparity obtained from the proposed MONO CIS using the OPA technique without an external light source. Therefore, the proposed MONO CIS with OPA could easily be applied to miniaturized devices. The proposed MONO CIS was designed and manufactured using the 0.11 μm CIS process.
本文介绍了偏移像素孔径宽度对用于三维图像传感器的单色(MONO)互补金属氧化物半导体图像传感器(CIS)性能的影响。通过一种在每个像素内部集成偏移像素孔径(OPA)的技术,可以利用OPA图案的视差获取深度信息。OPA分为两种图案类型:左偏移像素孔径(LOPA)和右偏移像素孔径(ROPA)。这些OPA被分为奇数行和偶数行,并集成在一个像素阵列中。为了分析OPA宽度与传感器特性之间的相关性,通过配置测试元件组(TEG)区域进行了实验。用于测量的TEG区域的OPA宽度在0.3 - 0.5μm范围内变化。随着孔径宽度减小,图像的视差增加,而灵敏度降低。利用OPA技术,无需外部光源,通过所提出的MONO CIS获得的视差就可以获取深度信息。因此,所提出的带有OPA的MONO CIS可以很容易地应用于小型化设备。所提出的MONO CIS采用0.11μm CIS工艺进行设计和制造。