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调理剂类型、下压力以及抛光垫表面微观纹理对SiO化学机械平面化性能的影响。

Effect of Conditioner Type and Downforce, and Pad Surface Micro-Texture on SiO Chemical Mechanical Planarization Performance.

作者信息

McAllister Jeffrey, Stuffle Calliandra, Sampurno Yasa, Hetherington Dale, Sierra Suarez Jon, Borucki Leonard, Philipossian Ara

机构信息

Department of Chemical and Environmental Engineering, University of Arizona, Tucson, AZ 85721, USA.

Araca Incorporated, Tucson, AZ 85718, USA.

出版信息

Micromachines (Basel). 2019 Apr 18;10(4):258. doi: 10.3390/mi10040258.

DOI:10.3390/mi10040258
PMID:31003465
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6523751/
Abstract

Based on a previous work where we investigated the effect of conditioner type and downforce on the evolution of pad surface micro-texture during break-in, we have chosen certain break-in conditions to carry out subsequent blanket SiO wafer polishing studies. Two different conditioner discs were used in conjunction with up to two different conditioning downforces. For each disc-downforce combination, mini-marathons were run using SiO wafers. Prior to polishing, each pad was broken-in for 30 min with one of the conditioner-downforce combinations. The goal of this study was to polish wafers after this break-in to see how the polishing process behaved immediately after break-in. One of the discs used in this study produced similar micro-texture results at both downforces, which echoed the results seen in the mini-marathon. When comparing the different polishing results obtained from breaking-in the pad with the different discs used in this study, the coefficient of friction (COF) and SiO removal rate (RR) were uncorrelated in all cases. However, the use of different discs resulted in different COF and RR trends. The uncorrelated COF and RR, as well as the differing trends, were explained by pad micro-texture results (i.e. the differing amount of fractured, poorly supported pad asperity summits).

摘要

基于我们之前的一项工作,在该工作中我们研究了修整剂类型和压力对磨合过程中抛光垫表面微观纹理演变的影响,我们选择了特定的磨合条件来进行后续的毯式SiO晶圆抛光研究。使用了两种不同的修整盘,并结合了高达两种不同的修整压力。对于每种盘-压力组合,使用SiO晶圆进行了长时间连续抛光测试。在抛光之前,每个抛光垫使用其中一种修整剂-压力组合进行30分钟的磨合。本研究的目的是在这种磨合后对晶圆进行抛光,以观察磨合后立即进行的抛光过程的表现。本研究中使用的其中一个盘在两种压力下都产生了相似的微观纹理结果,这与长时间连续抛光测试中看到的结果相呼应。当比较使用本研究中不同的盘对抛光垫进行磨合后获得的不同抛光结果时,在所有情况下,摩擦系数(COF)和SiO去除率(RR)均不相关。然而,使用不同的盘导致了不同的COF和RR趋势。COF和RR的不相关性以及不同的趋势可以通过抛光垫微观纹理结果(即破裂、支撑不良的抛光垫粗糙峰数量不同)来解释。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/047483fde041/micromachines-10-00258-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/dbba19336095/micromachines-10-00258-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/2001a17b6d90/micromachines-10-00258-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/b458b72f3f07/micromachines-10-00258-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/047483fde041/micromachines-10-00258-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/dbba19336095/micromachines-10-00258-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/2001a17b6d90/micromachines-10-00258-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/b458b72f3f07/micromachines-10-00258-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9b5/6523751/047483fde041/micromachines-10-00258-g004.jpg

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