Li Xin, Wang Yinggang, Chen Hongyu, Zhao Wenhong, Deng Qianfa, Yin Tengfei, To Suet, Sun Zhe, Shen Xi, Hang Wei, Yuan Julong
College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310023, China.
Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou 310023, China.
Micromachines (Basel). 2023 Jan 13;14(1):200. doi: 10.3390/mi14010200.
In this study, in order to improve and restore the performance of the polishing pads and reduce the cost of chemical mechanical polishing, three types of material polishing pads, namely, polyurethane, damping cloth, and non-woven fabric, were selected for the experiment. Accordingly, each polishing pad was set up with diamond conditioner and high-pressure micro-jet (HPMJ) conditioning control experiments. Subsequently, the fluctuation ranges of the material removal rate on the three polishing pads were 2.73-3.75 μm/h, 1.38-1.99 μm/h, and 2.36-4.32 μm/h, respectively under the HPMJ conditioning method, while the fluctuation ranges of the material removal rate on the three polishing pads were 1.80-4.14 μm/h, 1.02-2.09 μm/h, and 1.78-5.88 μm/h under the diamond conditioning method. Comparing the polishing pad morphologies under SEM, we observed that the surface of the polishing pad after HPMJ conditioning was relatively clean, and the hole structure was not blocked. Contrastingly, there remained numerous abrasive particles on the surface after the conventional diamond conditioning and the hole structure was blocked. Thus, the HPMJ conditioning technology is better than the traditional diamond conditioning technology. Subsequently, the polishing pad after HPMJ conditioning has a longer service life and a more stable material removal rate than that after traditional diamond conditioning.
在本研究中，为了提高和恢复抛光垫的性能并降低化学机械抛光成本，选择了三种材料的抛光垫，即聚氨酯、阻尼布和无纺布进行实验。相应地，对每个抛光垫进行了金刚石修整器和高压微喷射（HPMJ）修整控制实验。随后，在HPMJ修整方法下，三种抛光垫上的材料去除率波动范围分别为2.73 - 3.75μm/h、1.38 - 1.99μm/h和2.36 - 4.32μm/h，而在金刚石修整方法下，三种抛光垫上的材料去除率波动范围分别为1.80 - 4.14μm/h、1.02 - 2.09μm/h和1.78 - 5.88μm/h。通过扫描电子显微镜（SEM）比较抛光垫的形貌，我们观察到HPMJ修整后的抛光垫表面相对干净，孔结构未被堵塞。相反，传统金刚石修整后表面仍残留大量磨粒，孔结构被堵塞。因此，HPMJ修整技术优于传统金刚石修整技术。随后，HPMJ修整后的抛光垫比传统金刚石修整后的抛光垫具有更长的使用寿命和更稳定的材料去除率。
