InGaN/GaN多量子阱太阳能电池的电子和电学特性数值模拟

Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells.

作者信息

Chouchen Bilel, Gazzah Mohamed Hichem, Bajahzar Abdullah, Belmabrouk Hafedh

机构信息

Quantum and Statistical Physics Laboratory, Faculty of Sciences of Monastir, University of Monastir, Monastir 5019, Tunisia.

Department of Computer Science and Information, College of Science, Majmaah University, Zulfi 11932, Saudi Arabia.

出版信息

Materials (Basel). 2019 Apr 16;12(8):1241. doi: 10.3390/ma12081241.

DOI:10.3390/ma12081241

PMID:31014013

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6514574/

Abstract

In this paper, a numerical model allows to analyze the photovoltaic parameters according to the electronic properties of InGaN/GaN MQW solar cells under the effect of temperature, the number of quantum wells and indium composition. The numerical investigation starts from the evaluation through the finite difference (FDM) simulation of the self-consistent method coupled with the photovoltaic parameters taking into account the effects of the spontaneous and piezoelectric polarization. The results found were consistent with the literature. As expected, the temperature had a negative impact on the performance of InGaN/GaN MQW solar cells. However, increasing the number of quantum wells improves cell performance. This positive impact further improves with the increase in the indium rate. The obtained results were 28 mA/cm for the short-circuit current density, 1.43 V for the open-circuit voltage, and the obtained conversion efficiency was 31% for a model structure based on 50-period InGaN/GaN-MQW-SC under 1-sun AM1.5G.

摘要

在本文中，一个数值模型能够根据温度、量子阱数量和铟组分的影响，依据InGaN/GaN多量子阱太阳能电池的电子特性来分析光伏参数。数值研究始于通过有限差分（FDM）模拟对自洽方法进行评估，该模拟结合了考虑自发极化和压电极化效应的光伏参数。所得到的结果与文献一致。正如预期的那样，温度对InGaN/GaN多量子阱太阳能电池的性能有负面影响。然而，增加量子阱数量可提高电池性能。随着铟含量的增加，这种积极影响进一步增强。对于基于50周期InGaN/GaN-MQW-SC的模型结构，在1太阳AM1.5G光照条件下，所获得的短路电流密度为28 mA/cm²，开路电压为1.43 V，转换效率为31%。