Park Ji-Hyeon, Nandi R, Sim Jae-Kwan, Um Dae-Young, Kang San, Kim Jin-Soo, Lee Cheul-Ro
Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University Baekje-daero 567 Jeonju 54896 Republic of Korea
RSC Adv. 2018 Jun 5;8(37):20585-20592. doi: 10.1039/c8ra03127d.
III-Nitride nanowires are currently considered as next generation photovoltaic materials due to their excellent physical properties together with reduced dislocation densities, increased surface area and thus enhanced light absorption and direct path for carrier transport. Here, we investigate the photovoltaic characteristics of a solar cell fabricated from a novel hybrid nanostructure comprising uniaxial and coaxial InGaN/GaN multi-quantum wells (MQWs) along with an InGaN nano-cap layer. Various characterization methods were employed to study the optical and structural properties of the hybrid nanostructure. Transmission electron microscopy images revealed the hybrid nanostructure consists of distinct uniaxial and coaxial InGaN/GaN MQWs along with the InGaN nano-cap layer. The InGaN/GaN MQW architectures have a significant effect on the performance of the photovoltaic device. The solar cell fabricated with the hybrid nanostructure exhibits superior photovoltaic performance compared to the uniaxial as well as the coaxial InGaN/GaN nanowire MQW structures. The improved photovoltaic characteristic is primarily attributed to the considerably larger InGaN active area grown in the hybrid nanostructure. A conversion efficiency of 1.16% along with a fill factor of 70% was obtained for the device fabricated with the hybrid nanostructure. This study provides an experimental demonstration of the improvement of III-nitride nanowire based solar cells incorporating uniaxial and coaxial InGaN/GaN MQWs.
由于具有优异的物理性能，包括降低的位错密度、增加的表面积，从而增强了光吸收以及载流子传输的直接路径，III族氮化物纳米线目前被视为下一代光伏材料。在此，我们研究了一种由新型混合纳米结构制成的太阳能电池的光伏特性，该混合纳米结构包括单轴和同轴的InGaN/GaN多量子阱（MQW）以及一个InGaN纳米帽层。采用了各种表征方法来研究该混合纳米结构的光学和结构特性。透射电子显微镜图像显示，该混合纳米结构由不同的单轴和同轴InGaN/GaN MQW以及InGaN纳米帽层组成。InGaN/GaN MQW结构对光电器件的性能有显著影响。与单轴和同轴InGaN/GaN纳米线MQW结构相比，由该混合纳米结构制成的太阳能电池表现出优异的光伏性能。光伏特性的改善主要归因于在混合纳米结构中生长的相当大的InGaN有源区。采用该混合纳米结构制成的器件获得了1.16%的转换效率以及70%的填充因子。这项研究为包含单轴和同轴InGaN/GaN MQW的基于III族氮化物纳米线的太阳能电池的改进提供了实验证明。
