Liu Yahui, Fu Peng, Yin Yanling, Peng Yuehua, Yang Wenjun, Zhao Gang, Wang Weike, Zhou Weichang, Tang Dongsheng
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha, 410081, People's Republic of China.
Nanoscale Res Lett. 2019 Apr 24;14(1):144. doi: 10.1186/s11671-019-2978-y.
Negative photoconductivity effect has been observed in the Au/WO nanowire/Au devices in a high humidity environment, which might be attributed to the accumulation of H ions on the surface of WO nanowire. Under illumination with violet light (445 nm), the photo-excited holes can oxidize the adsorbed HO molecules to produce H ions and O, while the photo-excited electrons at the conduction band bottom do not have enough energy to reduce H ions. These H ions will accumulate on the surface of the hexagonalWO nanowire. They will capture mobile electrons and then reduce the concentration of carriers, which will result in a significant increase in the height of interface barrier and then a significant decrease in the conductance of the Au/h-WO nanowire/Au device. By adjusting the relative humidity, light intensity, or bias voltage, the concentration and distribution of H ions and then the conversion between positive and negative photoconductivity, as well as resistive switching properties, can be well regulated in this kind of devices.
在高湿度环境下的金/氧化钨纳米线/金器件中观察到了负光电导效应，这可能归因于氢离子在氧化钨纳米线表面的积累。在紫光（445nm）照射下，光激发的空穴可以氧化吸附的水分子产生氢离子和氧，而导带底部的光激发电子没有足够的能量还原氢离子。这些氢离子会积累在六方氧化钨纳米线的表面。它们会捕获移动电子，进而降低载流子浓度，这将导致界面势垒高度显著增加，然后金/六方氧化钨纳米线/金器件的电导显著降低。通过调节相对湿度、光强或偏置电压，氢离子的浓度和分布以及正负光电导之间的转换，以及电阻开关特性，在这类器件中都可以得到很好的调控。
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